* Library of optocoupler models * Copyright OrCAD, Inc. 1998 All Rights Reserved. * $Revision: 1.17 $ * $Author: RPEREZ $ * $Date: 20 Apr 1998 10:16:14 $ * *$ ******************************************************************************* *.model A4N25 * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt A4N25 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1 * Motorola pid=4N25 * 88-01-04 pwt * 88-01-18 pwt rework Cje approximation * The data sheet used for this model is from Motorola: it was the most * complete for DC and switching parameters, and is was easy to find the * component IR-LED and phototransistor as separate devices for further * specifications. * d_MainLED pin1 pin2 MainLED d_PhotoLED pin1 1 PhotoLED .001 v_PhotoLED 1 pin2 0 * f_TempComp 0 2 v_PhotoLED 1.7 r_TempComp 2 0 TempComp {rel_CTR} * g_BaseSrc 5 6 2 0 .9 q_PhotoBJT 5 6 4 PhotoBJT r_C 5 pin5 .1 r_B 6 pin6 .1 r_E 4 pin4 .1 * * Since active devices dominate pin-to-pin capacitance on each "side" of the * optocoupler, isolation is modeled by identical capacitances and resistances * linked to a common point; this gives isolation of .5pF and 1E+11 ohms c_1 pin1 7 .4p r_1 pin1 7 .12T c_2 pin2 7 .4p r_2 pin2 7 .12T c_4 pin4 7 .4p r_4 pin4 7 .12T c_5 pin5 7 .4p r_5 pin5 7 .12T c_6 pin6 7 .4p r_6 pin6 7 .12T * * Similar to Motorola MLED15. .model MainLED D(Is=10.01e-21 Rs=2.049 Ikf=11.84 N=1.053 Xti=3 Cjo=40p M=.34 + Vj=.75 Isr=30n Nr=3.8 Bv=6 Ibv=100u Tt=.5u) * Models photon generation: same as MainLED except no AC effects, no breakdown. .model PhotoLED D(Is=1.1p Rs=.66 Ikf=30m N=1.9 Xti=3 Cjo=0 M=.34 Vj=.75 + Isr=30n Nr=3.8 Bv=0 Tt=0) * Temperature compensation for system: 1.38x @ -55'C, .54x @ +100'C, all @ 10mA * Note: the photo BJT has its own temperature corrections, which must be kept * as the transistor is electrically available. .model TempComp RES(R=1 Tc1=-11.27m Tc2=43.46u) * * Similar to Motorola MDR3050; Hfe=325 @ Ic=500uA, Vce=5V * Use beta variation (w/Parts) to model change in current-transfer ratio (CTR). * Hand adjust reverse beta (Br) to match saturation characteristics. * Set Isc to model dark current. * Hand adjust Cjc to match fall time @ Ic=10mA (which yields rise time, too). * Hand adjust reverse transit-time (Tr) to match storage time @ Ic=10mA. * Delay time set by LED I-V and C-V characteristics; set Cje to 25% of Cjc, * inspection of phototransistor chip layouts show the emitter area is 20%-25% * that of the collector area. The same layouts show that base resistance is * made negligible by design; also, the operating currents are small. * Hand adjust forward transit-time (Tf) to match MDR3050 pulse data. Check * against 4N25 frequency response (Fig 11, 12). .model PhotoBJT NPN(Is=10f Xti=3 Vaf=60 + Bf=400 Ne=3.75 Ise=580p Ikf=.26 Xtb=1.5 + Br=.04 Nc=2 Isc=3.5n + Cjc=10p Mjc=.3333 Vjc=.75 Tr=88u + Cje=2.5p Mje=.3333 Vje=.75 Tf=1.5n) .ends *$ ******************************************************************************* *.model A4N25A * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt A4N25A pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1 * 88-01-05 pwt * Same as 4N25 (UL recognized). x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* *.model A4N26 * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt A4N26 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1 * 88-01-05 pwt * Same as 4N25, lower isolation breakdown voltage. x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* *.model A4N27 * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt A4N27 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=0.5 * 88-01-05 pwt * Same as 4N25, lower CTR, lower isolation breakdown voltage. x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* *.model A4N28 * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt A4N28 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=0.5 * 88-01-05 pwt * Same as 4N25, lower CTR, lower isolation breakdown voltage. x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT A4N32 A K C B E PARAMS: REL_CTR=1 * 4N32 from Motorola Optoelectronics data book Q3/93 - RPerez D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF * Gpcg models CTR Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)/(Q1 BF) + {70m*REL_CTR*(8.448148613*0.998979389^(1/(abs(I(Vsense))+0.1p))* + I(Vsense)^0.449371295)/18k} (0,0) (0.3m,0.3m) Q1 C B V Qdtect1 ;phototransistor detector Q2 C V E E Qdtect2 ;Darlington .model Demit D IS=1P N=1.948621 RS=1.560495 BV=3 IBV=0.05U + CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N .model Qdtect1 NPN IS=0.625P BF=135 NF=1.0941401 BR=10 TF=0 TR=1.2u + CJE=8.24P VJE=0.99 MJE=0.247851 CJC=8.01P VJC=0.514483 MJC=0.370451 + ISC=0 VAF=275 IKF=0 ISE=0.1p .model Qdtect2 NPN IS=0.625P BF=135 NF=1.0941401 BR=10 TF=0 TR=1.2u + CJE=8.24P VJE=0.99 MJE=0.247851 + ISC=0 VAF=275 IKF=0 ISE=0.1p ISS=0 CJS=3.82p VJS=0.99 MJS=0.200397 .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT A4N33 A K C B E PARAMS: REL_CTR=1 * 4N33 from Motorola Optoelectronics data book Q3/93 - RPerez D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF * Gpcg models CTR Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)/(Q1 BF) + {70m*REL_CTR*(8.448148613*0.998979389^(1/(abs(I(Vsense))+0.1p))* + I(Vsense)^0.449371295)/18k} (0,0) (0.3m,0.3m) Q1 C B V Qdtect1 ;phototransistor detector Q2 C V E E Qdtect2 ;Darlington .model Demit D IS=1P N=1.948621 RS=1.560495 BV=3 IBV=0.05U + CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N .model Qdtect1 NPN IS=0.625P BF=135 NF=1.0941401 BR=10 TF=0 TR=1.2u + CJE=8.24P VJE=0.99 MJE=0.247851 CJC=8.01P VJC=0.514483 MJC=0.370451 + ISC=0 VAF=275 IKF=0 ISE=0.1p .model Qdtect2 NPN IS=0.625P BF=135 NF=1.0941401 BR=10 TF=0 TR=1.2u + CJE=8.24P VJE=0.99 MJE=0.247851 + ISC=0 VAF=275 IKF=0 ISE=0.1p ISS=0 CJS=3.82p VJS=0.99 MJS=0.200397 .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT A4N47A A K C B E PARAMS: REL_CTR=1 * 4N47A from TI * RAP 5/97 D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 0.15n * Gpcg models CTR Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)/(Q1 BF) + {0.75m*REL_CTR*(128393.7*0.999895312^(1/(abs(V(T))+0.1p))*V(T)^1.6857559)/300} + (0,0) (10,10) Q1 C B E E Qdtect ;phototransistor detector .model Demit D IS=6.53E-13 N=1.983045 RS=21.26446 BV=2 IBV=10U + CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N * ISC controls dark current * IKF controls high current gain .model Qdtect NPN IS=20P BF=300 NF=1.3080447 BR=10 TF=7N TR=1.29u + CJE=3.7P VJE=0.99 MJE=0.2411274 CJC=4.03P VJC=0.597478 MJC=0.431978 + ISC=0.01p VAF=6.5 IKF=0.5 ISS=0 CJS=2.03p VJS=0.61 MJS=0.31 .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT A4N48A A K C B E PARAMS: REL_CTR=1 * 4N48A from TI * RAP 5/97 D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 0.15n * Gpcg models CTR Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)/(Q1 BF) + {1.2m*REL_CTR*(128393.7*0.999895312^(1/(abs(V(T))+0.1p))*V(T)^1.6857559)/300} + (0,0) (10,10) Q1 C B E E Qdtect ;phototransistor detector .model Demit D IS=6.53E-13 N=1.983045 RS=21.26446 BV=2 IBV=10U + CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N * ISC controls dark current * IKF controls high current gain .model Qdtect NPN IS=20P BF=300 NF=1.3080447 BR=10 TF=7.5N TR=1.29u + CJE=3.7P VJE=0.99 MJE=0.2411274 CJC=4.03P VJC=0.597478 MJC=0.431978 + ISC=0.01p VAF=6.5 IKF=0.5 ISS=0 CJS=2.03p VJS=0.61 MJS=0.31 .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT A4N49A A K C B E PARAMS: REL_CTR=1 * 4N49A from TI * RAP 5/97 D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 0.15n * Gpcg models CTR Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)/(Q1 BF) + {1.35m*REL_CTR*(128393.7*0.999895312^(1/(abs(V(T))+0.1p))*V(T)^1.6857559)/300} + (0,0) (10,10) Q1 C B E E Qdtect ;phototransistor detector .model Demit D IS=6.53E-13 N=1.983045 RS=21.26446 BV=2 IBV=10U + CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N * ISC controls dark current * IKF controls high current gain .model Qdtect NPN IS=20P BF=300 NF=1.3080447 BR=10 TF=12N TR=1.29u + CJE=3.7P VJE=0.99 MJE=0.2411274 CJC=4.03P VJC=0.597478 MJC=0.431978 + ISC=0.01p VAF=6.5 IKF=0.5 ISS=0 CJS=2.03p VJS=0.61 MJS=0.31 .ends *$ ******************************************************************************* * A = Anode * C = Cathode * P = (light)Power as voltage input .SUBCKT BPW32 A C P PARAMS: Spec=1.0 Sensy=0.5 * BPW32 from Siemens * RAP 7/97 Rdummy P 0 1G Rswt P LP 1k Cswt LP 0 0.6n DPD A C PhotoDet GPD C A TABLE {V(LP)* Spec * Sensy} (0,0) (1,1) .MODEL PhotoDet D IS=0.974p RS=0.1 N=1.986196 BV=7.1 IBV=0.1n + CJO=99.2p VJ=0.455536 M=0.418717 TT=500n ISR=6p NR=100 .ends *$ ******************************************************************************* * H = high * L = low .subckt bulb H L params: Vnom=120V Pnom=100W HCtau=4.082 * * Tungsten Incandescent Lamp (Lightbulb) * RAP 6/2/97 * * * To determine voltage, current through the terminals (H and L) * is sensed and multiplied by the filaments instantaneous resistance. * Vsense H c 0 ;terminal current sense * * Current is multiplied by nominal resistance and scaled to get voltage Efilmnt c L VALUE = {I(Vsense) * V(res) * Vnom * Vnom / Pnom} * Gpow 0 temp VALUE = {I(Vsense) * V(H,L)} ;instantaneous power * * HCtau is used to set the heat capacity time constant. Different * bulbs may have different time constants. Rtherml temp ambnt {2600/Pnom} ;temperature for nominal power=2600K+300K Ctherml temp 0 {(HCtau / 2600) * Pnom} ;thermal capacitity Vambnt ambnt 0 300 ;ambient temperature in degrees Kelvin * * Normalized resistance as a function of temperature. Eres res 0 TABLE {log(V(temp)/300)} + 0.0 0.06 + 0.5 0.29 + 1.0 0.56 + 1.5 0.82 + 2.0 0.94 + 2.33 0.98 + 2.405 1.04 + 2.53 1.08 * RGpath res 0 1Meg .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT CNY17-1 A K C B E PARAMS: REL_CTR=1 * CNY17-1 from Motorola Optoelectronics data book Q3/93 - RPerez D1 A D DCNY17 ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 0.15n * Gpcg models CTR Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)*REL_CTR/(Q1 BF) + {6m*(0.9277*V(T)^3-1.2381*V(T)^2+100.4332*V(T)-0.02771)*REL_CTR/400} + (0,0) (10,10) Q1 C B E E QCNY17 ;phototransistor detector .model DCNY17 D IS=1P N=1.948621 RS=1.560495 BV=6 IBV=10U + CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N * ISC controls dark current * IKF controls high current gain .model QCNY17 NPN IS=3.64P BF=400 NF=1.193293 BR=10 TF=2N TR=350n + CJE=5.16P VJE=0.99 MJE=0.2411274 CJC=18P VJC=0.597478 MJC=0.431978 + ISC=0.207N VAF=65 IKF=0.09 ISS=0 CJS=7.74p VJS=0.61 MJS=0.31 .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT CNY17-2 A K C B E PARAMS: REL_CTR=1 * CNY17-2 from Motorola Optoelectronics data book Q3/93 - RPerez D1 A D DCNY17 ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 0.25n * Gpcg models CTR Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)*REL_CTR/(Q1 BF) + {10m*(0.9277*V(T)^3-1.2381*V(T)^2+100.4332*V(T)-0.02771)*REL_CTR/400} + (0,0) (10,10) Q1 C B E QCNY17 ;phototransistor detector .model DCNY17 D IS=1P N=1.948621 RS=1.560495 BV=6 IBV=10U + CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N * ISC controls dark current * IKF controls high current gain .model QCNY17 NPN IS=3.64P BF=400 NF=1.193293 BR=10 TF=1N TR=30n + CJE=5.16P VJE=0.99 MJE=0.2411274 CJC=18P VJC=0.597478 MJC=0.431978 + ISC=0.207N VAF=65 IKF=0.09 ISS=0 CJS=7.74p VJS=0.61 MJS=0.31 .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT CNY17-3 A K C B E PARAMS: REL_CTR=1 * CNY17-3 from Motorola Optoelectronics data book Q3/93 - RPerez D1 A D DCNY17 ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 0.27n * Gpcg models CTR Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)/(Q1 BF) + {15m*(0.9277*V(T)^3-1.2381*V(T)^2+100.4332*V(T)-0.02771)*REL_CTR/400} + (0,0) (10,10) Q1 C B E QCNY17 ;phototransistor detector .model DCNY17 D IS=1P N=1.948621 RS=1.560495 BV=6 IBV=10U + CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N * ISC controls dark current * IKF controls high current gain .model QCNY17 NPN IS=3.64P BF=400 NF=1.193293 BR=10 TF=13N TR=375n + CJE=5.16P VJE=0.99 MJE=0.2411274 CJC=18P VJC=0.597478 MJC=0.431978 + ISC=0.207N VAF=65 IKF=0.09 ISS=0 CJS=7.74p VJS=0.61 MJS=0.31 .ends *$ ******************************************************************************* *.model H11A2 * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt H11A2 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1 * 88-01-05 pwt * Every manufacturer seems to use their own 4N25 as an equivalent device. x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* *.model H11A3 * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt H11A3 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1 * 88-01-05 pwt * Same as H11A2, higher isolation breakdown voltage. x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* *.model H11A4 * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt H11A4 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1 * 88-01-05 pwt * Every manufacturer seems to use their own 4N27 as an equivalent device. x1 pin1 pin2 pin4 pin5 pin6 A4N27 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* *.model H11A520 * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt H11A520 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1 * 88-01-05 pwt * Same as H11A2, higher isolation breakdown voltage. x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT H11AV1 A K C B E PARAMS: REL_CTR=1 * H11AV1 from Motorola * RAP 5/97 D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 0.11n * Gpcg models CTR Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)/(Q1 BF) + {15m*REL_CTR*(140.11034*0.999716761^(1/(abs(V(T))+0.1p))*V(T)^1.0873374)/400} + (0,0) (10,10) Q1 C B E E Qdtect ;phototransistor detector .model Demit D IS=1.22p N=1.962592 RS=1.584805 BV=6 IBV=10U + CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N * ISC controls dark current * IKF controls high current gain .model Qdtect NPN IS=12.5P BF=400 NF=1.2742607 BR=10 TF=1.5N TR=2.2u + CJE=7.62P VJE=0.99 MJE=0.243609 CJC=19.64P VJC=0.445269 MJC=0.40354 + ISC=1p VAF=100 IKF=0.17 ISS=0 CJS=5.51p VJS=0.99 MJS=0.242193 .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT H11AV2 A K C B E PARAMS: REL_CTR=1 * H11AV2 from Motorola * RAP 5/97 D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 0.11n * Gpcg models CTR Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)/(Q1 BF) + {10m*REL_CTR*(140.11034*0.999716761^(1/(abs(V(T))+0.1p))*V(T)^1.0873374)/400} + (0,0) (10,10) Q1 C B E E Qdtect ;phototransistor detector .model Demit D IS=1.22p N=1.962592 RS=1.584805 BV=6 IBV=10U + CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N * ISC controls dark current * IKF controls high current gain .model Qdtect NPN IS=12.5P BF=400 NF=1.2742607 BR=10 TF=1.5N TR=2.2u + CJE=7.62P VJE=0.99 MJE=0.243609 CJC=19.64P VJC=0.445269 MJC=0.40354 + ISC=1p VAF=100 IKF=0.17 ISS=0 CJS=5.51p VJS=0.99 MJS=0.242193 .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT H11AV3 A K C B E PARAMS: REL_CTR=1 * H11AV3 from Motorola * RAP 5/97 D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 0.11n * Gpcg models CTR Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)/(Q1 BF) + {7m*REL_CTR*(140.11034*0.999716761^(1/(abs(V(T))+0.1p))*V(T)^1.0873374)/400} + (0,0) (10,10) Q1 C B E E Qdtect ;phototransistor detector .model Demit D IS=1.22p N=1.962592 RS=1.584805 BV=6 IBV=10U + CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N * ISC controls dark current * IKF controls high current gain .model Qdtect NPN IS=12.5P BF=400 NF=1.2742607 BR=20 TF=1.5N TR=2.2u + CJE=7.62P VJE=0.99 MJE=0.243609 CJC=19.64P VJC=0.445269 MJC=0.40354 + ISC=1p VAF=100 IKF=0.07 ISS=0 CJS=5.51p VJS=0.99 MJS=0.242193 .ends *$ ******************************************************************************* * A - Anode of LED * C - Cathode of LED * A1 - Anode of photodetector 1 * C1 - Cathode of photodetector 1 * A2 - Anode of photodetector 2 * C2 - Cathode of photodetector 2 * K1 - Servo gain * K2 - Forward gain * K3 - Transfer gain .Subckt IL300 A C A1 C1 A2 C2 PARAMS: K1=0.007 K2=0.007 K3=1 * IL300 from Siemens * RAP 5/97 DLED A E Demit VE E C 0 E2 D1 0 TABLE ; {Ip2 vs IF} + {(0.955414823*0.999409809^(1/(abs(I(VE))+0.1p))*I(VE)^0.963133681)} + (0,0) (1,1) Rdly1 D1 D2 1K Cdly1 D2 0 0.17N Rdly2 D2 D3 1K Cdly2 D3 0 0.17N Gdly1 C1 A1 VALUE {K1*V(D3)} D1 A1 C1 Dtect RD1 A1 C1 15G Gdly2 C2 A2 VALUE {K3*K2*V(D3)} D2 A2 C2 Dtect RD2 A2 C2 15G .model Demit D IS=1.51E-16 N=1.495822 RS=2.624361 BV=5 IBV=1U + CJO=15P VJ=1 M=0.5 EG=1.424 TT=500N .model Dtect D IS=0.5p N=1 RS=0.001 BV=50 IBV=1U + CJO=14P VJ=0.159621 M=0.344264 EG=1.11 TT=10N .ends *$ ******************************************************************************* *.model MCT2 * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt MCT2 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1 * 88-01-05 pwt * Every manufacturer seems to use their own 4N25 as an equivalent to the * General Instruments device. x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* *.model MCT2E * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt MCT2E pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1 * 88-01-05 pwt * Same as MTC2E, higher isolation breakdown voltage. x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* .MODEL MLED81 D + IS=10.000E-9 + N=1.1248 + RS=1.2366 + IKF=45.752E-15 + CJO=25.000E-12 + M=.3333 + VJ=.75 + ISR=10.010E-21 + BV=5.4169 + IBV=10 + TT=5.0000E-9 *$ ******************************************************************************* * A = Anode * C = Cathode * P = (light)Power as output voltage .SUBCKT MLED96 A C P PARAMS: Spec=1.0 Sensy=0.5 * MLED96 from Motorola * RAP 10/97 DLED A VC MLED96 Rleak A VC 40Meg Rin P 0 1G VLED VC C ELED P 0 TABLE {I(VLED)^1.170105501*EXP(-2.114426964-4.065819492*I(VLED))} (0,0) (1,1) .MODEL MLED96 D + IS=10.000E-21 + N=1.5219 + RS=1.7433 + CJO=50.000E-12 + M=.3333 + VJ=.75 + ISR=100.00E-12 + BV=5.3573 + IBV=10 + TT=5.0000E-9 .ends *$ ******************************************************************************* *.model MOC1005 * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt MOC1005 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1 * 88-01-05 pwt * Motorola equivalent of 4N25 x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* *.model MOC1006 * 6-pin DIP: pin #1 #2 #4 #5 #6 * | | | | | .subckt MOC1006 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1 * 88-01-05 pwt * Motorola equivalent of 4N27 x1 pin1 pin2 pin4 pin5 pin6 A4N27 params: rel_CTR={rel_CTR} .ends *$ ******************************************************************************* * A = Anode * C = Cathode * P = (light)Power as voltage input .SUBCKT MRD500 A C P PARAMS: Spec=1.0 Sensy=0.3894 * MRD500 from Motorola * RAP 7/97 DPD A C PhotoDet GPD C A TABLE {V(P)* Spec * Sensy} (0,0) (1,1) .MODEL PhotoDet D IS=1.02p RS=10 N=0.841978 BV=100 IBV=1u + CJO=6.03p VJ=0.202968 M=0.146605 TT=1n ISR=17p .ends *$ ******************************************************************************* * A = Anode * C = Cathode * P = (light)Power as voltage input .SUBCKT MRD510 A C P PARAMS: Spec=1.0 Sensy=0.012 * MRD510 from Motorola * RAP 7/97 DPD A C PhotoDet GPD C A TABLE {V(P)* Spec * Sensy} (0,0) (1,1) .MODEL PhotoDet D IS=1.02p RS=10 N=0.841978 BV=100 IBV=1u + CJO=6.03p VJ=0.202968 M=0.146605 TT=1n ISR=17p .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT PS1001 A K C B E PARAMS: REL_CTR=1 * PS1001 from NEC * RAP 6/97 D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 0.1n * Gpcg models CTR Gpcg C B TABLE ;Photodetector {(IC vs IF) / Q1 BF} + {REL_CTR*(-0.1645809975*V(T)^3+0.02017240494*V(T)^2+0.001153610396*V(T)+1p)} + (0,0) (10,10) Q1 C B E E Qdtect ;phototransistor detector .model Demit D IS=1p N=1.968797 RS=8.379573 BV=5 IBV=10U + CJO=100P EG=1.424 TT=500N * ISC controls dark current .model Qdtect NPN IS=25P BF=400 NF=1.3247194 BR=400 TF=1.7N TR=2.711n + CJE=12P CJC=25P ISC=12p VAF=100 ISS=0 CJS=10p .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * E = BJT emitter .SUBCKT PS2501 A K C E PARAMS: REL_CTR=1 * PS2501 from NEC * RAP 6/97 D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 0.2n * Gpcg models CTR Gpcg C B TABLE ;Photodetector {(IC vs IF) / Q1 BF} + {If(V(T)<10m,(V(T)^1.63967642*exp(5.15355287-125.491134*V(T))*REL_CTR/100), + (V(T)^0.540960664*exp(-1.054818991-10.04734475*V(T))*REL_CTR/100))} + (0,0) (10,10) Q1 C B E E Qdtect ;phototransistor detector Rdummy B 0 4G .model Demit D IS=1p N=1.999644 RS=0 BV=6 IBV=10U + CJO=50P EG=1.424 TT=500N .model Qdtect NPN IS=100P BF=100 NF=1.3 BR=50 TF=0.1N TR=220n + CJE=10P CJC=10P VAF=100 ISS=0 CJS=1p .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * E = BJT emitter .SUBCKT PS2505 A K C E PARAMS: REL_CTR=1 * PS2505 from NEC * RAP 6/97 D1 A D Demit ;Gallium arsenide infrared emitting diode D2 D A Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 54.302p * Gpcg models CTR Gpcg C B TABLE ;Photodetector {(IC vs IF) / Q1 BF} + {If(abs(V(T))<10m, + (abs(V(T))^1.68372145*exp(5.46602664-137.521721*abs(V(T)))*REL_CTR/100), + (abs(V(T))^0.441917*exp(-1.54666-6.875337*abs(V(T)))*REL_CTR/100))} + (0,0) (10,10) Q1 C B E Qdtect ;phototransistor detector Rdummy B 0 5G .model Demit D IS=1.22E-14 N=1.638226 RS=0.757535 BV=6 IBV=10U + CJO=50P EG=1.424 TT=500N .model Qdtect NPN IS=100P BF=100 NF=1.25 BR=20 TF=4.86968N TR=1.31131u + CJE=197.468P CJC=110.915P VAF=100 ISS=0 CJS=36.04p .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * E = BJT emitter .SUBCKT PS2561 A K C E PARAMS: REL_CTR=1 * PS2561 from NEC * RAP 7/97 D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 58.6255p * Gpcg models CTR Gpcg C B TABLE ;Photodetector {(IC vs IF) / Q1 BF} + {If(V(T)<10m, + (V(T)^1.605294114*exp(4.920739649-117.1774597*V(T))*REL_CTR/100), + (V(T)^0.449685774*exp(-1.46495545-7.719515043*V(T))*REL_CTR/100))} + (0,0) (10,10) Q1 C B E E Qdtect ;phototransistor detector Rdummy B 0 5G .model Demit D IS=1.22E-14 N=1.638226 RS=0.757535 BV=6 IBV=10U + CJO=50P EG=1.424 TT=500N .model Qdtect NPN IS=700P BF=100 NF=1.25 BR=20 TF=6.8360n TR=870.419n + CJE=78.2623P CJC=90.0285P VAF=100 ISS=0 CJS=44.1055p .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * E = BJT emitter .SUBCKT PS2565 A K C E PARAMS: REL_CTR=1 * PS2565 from NEC * RAP 7/97 D1 A D Demit ;Gallium arsenide infrared emitting diode D2 D A Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 57.8917p * Gpcg models CTR Gpcg C B TABLE ;Photodetector {(IC vs IF) / Q1 BF} + {If(abs(V(T))<10m, + (abs(V(T))^1.59963925*exp(4.88617775-112.523882*abs(V(T)))*REL_CTR/100), + (abs(V(T))^0.423169*exp(-1.57596-7.158995*abs(V(T)))*REL_CTR/100))} + (0,0) (10,10) Q1 C B E Qdtect ;phototransistor detector Rdummy B 0 5G .model Demit D IS=1.22E-14 N=1.638226 RS=0.757535 BV=6 IBV=10U + CJO=50P EG=1.424 TT=500N .model Qdtect NPN IS=100P BF=100 NF=1.25 BR=20 TF=13.5378N TR=45.8149N + CJE=59.9477P CJC=98.1754P VAF=100 ISS=0 CJS=55.5139p .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT PS2601 A K C B E PARAMS: REL_CTR=1 * PS2601 from NEC * RAP 7/97 D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 74.7658p * Gpcg models CTR Gpcg C B TABLE ;Photodetector {(IC vs IF) / Q1 BF} + {If(V(T)<8m, + (V(T)^1.80725553*exp(6.53900798-167.674797*V(T))*REL_CTR/700), + (V(T)^0.705649*exp(0.029347-18.3033*V(T))*REL_CTR/700))} + (0,0) (10,10) Q1 C B E E Qdtect ;phototransistor detector Rdummy B 0 5G .model Demit D IS=2.36E-13 N=1.824382 RS=1.773416 BV=6 IBV=10U + CJO=30P EG=1.424 TT=500N .model Qdtect NPN IS=0.5714P BF=700 NF=1.0895332 BR=20 TF=0.7N TR=10.6n + CJE=6P CJC=1.7P VAF=100 ISS=0 CJS=1.p ISC=120p .ends *$ ******************************************************************************* * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter .SUBCKT PS2621 A K C B E PARAMS: REL_CTR=1 * PS2621 from NEC * RAP 7/97 D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T 10K Cd T 0 14.7389p * Gpcg models CTR Gpcg C B TABLE ;Photodetector {(IC vs IF) / Q1 BF} + {If(V(T)<10m, + (V(T)^1.61722627*exp(4.36489543-81.9441523*V(T))*REL_CTR/700), + (V(T)^0.465832*exp(-1.70391-4.509543*V(T))*REL_CTR/700))} + (0,0) (10,10) Q1 C B E E Qdtect ;phototransistor detector Rdummy B 0 5G .model Demit D IS=1.09E-13 N=1.693609 RS=1.431383 BV=6 IBV=10U + CJO=70P EG=1.424 TT=500N .model Qdtect NPN IS=2.857P BF=700 NF=1.1786653 BR=20 TF=1.15564N TR=4.56886n + CJE=16.315P CJC=21.1189P VAF=100 ISS=0 CJS=44.5657p ISC=120p .ends *$ ******************************************************************************* * LD = Laser diode cathode * C = Common pin * PD = Photodiode anode .SUBCKT SLD1121VS LD C PD * SLD1121VS from Sony * RAP 7/97 Dld C I dlaser Vid I LD Eop op 0 TABLE {I(Vid)} (0,0) (37m,0.3m) (40m,0.5m) (47m,5m) (100m,40m) Rdummy op 0 1k Gopd C PD TABLE {V(op)} (0,0) (30m,1.5m) Dpd PD C pdetec .model dlaser D IS=5E-37 N=1 RS=2 BV=2 IBV=10u *EG=2.8 XTI=3 .model pdetec D CJO=5p BV=15 IBV=10u .ends *$