* Library of Motorola Pressure Sensor Models * $Revision: 1.1 $ * $Author: RPEREZ $ * $Date: 20 Apr 1998 09:06:22 $ * *---------------------------------------------------------------------- * * Motorola Pressure Sensor Macromodel Library * Rev 1.0 * * Macromodels, simulation models, or other models provided by * Motorola, directly or indirectly, are not warranted by * Motorola as fully representing all of the specifications and * operating characteristics of the semiconductor product to * which the model relates. Moreover, these models are * furnished on an "as is" basis without support or warranty of * any kind, either expressed or implied, regarding the use * thereof and Motorola specifically disclaims all implied * warranties of merchantability and fitness of the models for * any purpose. Motorola does not assume any liability arising * out of the application or use of the models including * infringement of patents and copyrights nor does Motorola * convey any license under its patents and copyrights or the * rights of others. Motorola reserves the right to make * changes without notice to any model. * * If you have any questions or suggestions, please contact * * Motorola Inc. * Semiconductor Products Sector * Sensor Products Division * 5005 East McDowell Road * Phoenix, AZ 85008 * (602) 244-4556 * * * Although macromodels can be a useful tool in evaluating * device performance in various applications, they cannot * model exact device performance under all conditions, nor are * they intended to replace breadboarding for final * verification. * * The purpose of this library is to model what the Motorola * MPX series pressure sensor device data book represents. * * This library consists of three parts: * * 1. MPX Basic Pressure Sensors * 2. MPX Compensated Pressure Sensors * 3. MPX Integrated Pressure Sensors * * The MPX Basic Pressure Sensors and the MPX Compensated Pressure * Sensors are jointly developed by Jeff Baum and Aiteen Zhang. * The Integrated Pressure Sensors is developed by Aiteen Zhang * using the transfer functions given in the device data book. * * In order to use this library, several statements are required in * your source file (xxx.cir): * * 1) a subcircuit statement, X1 * to call the particular device model. * 2) a library statement, .LIB * to call this library. * * In addition, the pressure inputs (nodes 5 and 6 for basic and * compensated sensor models, nodes 7 and 8 for the integrated * sensor model) are intended to be connected to an independent * voltage source that represents the differential pressure across * the sensor device. A second independent voltage source can be * connected from node 6 or 8 to circuit ground to represent the * common mode pressure seen at both pressure inputs. Connecting * node 6 or 8 directly to ground potential is analogous to applying * an absolute or gage pressure to the sensor device. * *-------------------------------------------------------------------------- * ****** MPX Basic Pressure Sensors ****** * * Author: Jeff Baum and Aiteen Zhang * Date: November 11, 1994 * Revise: December 1, 1994 * * MPX Basic Pressure Sensors consists of * MPX10, MPX12, MPX50, MPX100, MPX200, MPX700 * * The parameters in the MPX Basic Pressure Sensors were derived * from the typical values in the data sheets for each part. * Parameter tolerances have not been included for the purpose of * Monte Carlo or Worst Case Analysis simulation. * * DEFINITIONS * ----------- * The general equation that models the zero pressure offset, sensor * sensitivity, temperature coefficients of offset and full-scale span, * and the ratiometricity of certain parameters with sensor excitation * voltage is: * * Vout = {SENS*[1+TCVfss*(TEMP-Tn)]*P+[Voff+TCVoff*(TEMP-Tn)]}*Vs/Vsnom * * where Vout is the differential sensor output voltage * P is the internal applied pressure * * a voltage source is used as an input to the model to simulate pressure * * * Vs = Internal Excitation Voltage * Voff = Zero Pressure Offset * SENS = Sensitivity, symbol in data book is V/P * TCVfss = Temperature Coefficient of Full Scale Span * TCVoff = Temperature Coefficient of Offset * TCR = Temperature Coefficient of Resistance * Tn = Nominal Temperature * Zin = Input Impedance * Zoutp = Single Ended Output Impedance * (S+ to ground, with Vcc and ground shorted) * Zoutn = Single Ended Output Impedance * (S- to ground, with Vcc and ground shorted) * Vsnom = Nominal Supply Voltage * V(a,b) = Voltage across nodes a and b * TEMP = PSpice System Variable for Temperature * * Connections: * 1 - Ground * 2 - Positive Output * 3 - Supply Voltage * 4 - Negative Output * 5 - Positive Pressure Input * 6 - Negative Pressure Input * * ****** MPX Compensated Pressure Sensors ****** * * Author: Jeff Baum and Aiteen Zhang * Date: November 28, 1994 * Revise: * * MPX Compensated Pressure Sensors consists of * MPX2010, MPX2012, MPX2050 MPX2051, MPX2052, MPX2100, MPX2101 * MPX2200, MPX2201, MPX7050, MPX7100, MPX7200 * * The parameters in the MPX Compensated Pressure Sensors were derived * from the typical values in the data sheets for each part. * Parameter tolerances have not been included for the purpose of * Monte Carlo or Worst Case Analysis simulation. * * DEFINITIONS * ----------- * The general equation that models the zero pressure offset, sensor * sensitivity, temperature coefficients of offset and full-scale span, * and the ratiometricity of certain parameters with sensor excitation * voltage is: * * Vout = {SENS*[1+TCVfss*(TEMP-Tn)]*P+[Voff+TCVoff*(TEMP-Tn)]}*Vs/Vsnom * * where Vout is the differential sensor output voltage * P is the internal applied pressure * * a voltage source is used as an input to the model to simulate pressure * * * Vs = Internal Excitation Voltage * Voff = Zero Pressure Offset * SENS = Sensitivity, symbol in data book is V/P * TCVfss = Temperature Coefficient of Full Scale Span * TCVoff = Temperature Coefficient of Offset * Tn = Nominal Temperature * Zin = Input Impedance * Zoutp = Single Ended Output Impedance * (S+ to ground, with Vcc and ground shorted) * Zoutn = Single Ended Output Impedance * (S- to ground, with Vcc and ground shorted) * Vsnom = Nominal Supply Voltage * V(a,b) = Voltage across nodes a and b * TEMP = PSpice System Variable for Temperature * * Connections: * 1 - Ground * 2 - Positive Output * 3 - Supply Voltage * 4 - Negative Output * 5 - Positive Pressure Input * 6 - Negative Pressure Input * * ****** MPX Integrated Pressure Sensors ****** * * Author: Aiteen Zhang * Date: December 5, 1994 * Revise: December 19, 1994 * * MPX Integrated Pressure Sensors consists of * MPX4100, MPX4101, MPX4115, MPX4250, MPX5050, MPX5100A, MPX5100D * * The parameters in the MPX Integrated Pressure Sensors were derived * from the data sheets for each part. * * DEFINITIONS * ----------- * The general transfer function that models the integrated parts is: * * Vout = Vs (P * SENS/Vsnom + Offset) + Error * Offset = Voff/Vsnom * Vs = V(3,2) * P = V(12,8) * Error = Perror * Tmult * (SENS/Vsnom) * Vs * * where Vout is the single ended sensor output voltage * P is the internal applied pressure * * a voltage source is used as an input to the model to simulate pressure * * Vs = Supply Voltage * P = The voltage (represents pressure) at the internal * pressure node of the sensor model. * Voff = Zero Pressure Offset * SENS = Sensitivity, symbol in data book is V/P * Vsnom = Nominal Supply Voltage * V(a,b) = Voltage across nodes a and b * TEMP = PSpice System Variable for Temperature * * Connections: * 1 - Output * 2 - Ground * 3 - Supply Voltage * 7 - Positive Pressure Input * 8 - Negative Pressure Input * * *-------------------------------------------------------------------------- * * The authors would like to thank Ron Kielkowski from RCG Research, Inc., * for his excellent coaching during the Pspice class and Char Walker for * editing the library and putting it in the required format. * *-------------------------------------------------------------------------- * Motorola reserves the right to make changes without further notice to any * products herein. Motorola makes no warranty, representation or guarantee * regarding the suitability of its products for any particular purpose, nor * does Motorola assume any liability arising out of the application or use * of any product or circuit, and specifically disclaims any and all * liability, including without limitation consequential or incidental * damages. "Typical" parameters can and do vary in different applications. * All operating parameters, including "Typicals" must be validated for each * customer application by customer's technical experts. Motorola does not * convey any license under its patent rights nor the rights of others. * Motorola products are not designed, intended, or authorized for use as * components in systems intended for surgical implant into the body, or * other applications intended to support or sustain life, or for any * other application in which the failure of the Motorola product could * create a situation where personal injury or death may occur. Should * Buyer purchase or use Motorola products for any such unintended or * unauthorized application, Buyer shall indemnify and hold Motorola and * its officers, employees, subsidiaries, affiliates, and distributors * harmless against all claims, costs, damages, and expenses, and * reasonable attorney fees arising out of, directly or indirectly, * any claim of personal injury or death associated with such * unintended or unauthorized use, even if such claim alleges that * Motorola was negligent regarding the design or manufacture of the * part. Motorola and (Motorola logo symbol) are registered trademarks of * Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative * Action Employer. * * Pspice is a registered trademark of OrCAD Incorporated. * ******************************************************************************* *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node * of the sensor model. * Voff = 20 mV Zero pressure offset at 25C and 3V excitation * voltage. * SENS = 3.5 mV/kPa Pressure sensitivity at 25C and 3V excitation * voltage. * TCVfss = -0.19 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package stresses. * TCR = 0.24 %/C Based on current process (sensor element resistivity). * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 459 Input Impedance of sensor at 25C. * Zoutp = 579 Output Impedance of sensor at 25C. * Zoutn = 622 Output Impedance of sensor at 25C. * Vsnom = 3 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX10/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 3.5m .PARAM TCVfss -0.19E-2 .PARAM Tn 25 .PARAM Voff 20m .PARAM TCVoff 0.015m .PARAM Vsnom 3 .PARAM Zin 459 .PARAM Zoutp 579 .PARAM Zoutn 622 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response * of 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is * almost 100% at dc. The users should change this value to the source * resistance of the voltage source they are using in order to see the * electrical response time. RS2 = Zin. The value of the input resistance, * Zin, is chosen based on the data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} TC = 0.0024 CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} TC = 0.0024 ROUT- 9 4 {Zoutn} TC = 0.0024 * * A typical value for the common mode voltage, Ecom, is half of the * excitation voltage. It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 20 mV Zero pressure offset at 25C and 3V excitation * voltage. * SENS = 5.5 mV/kPa Pressure sensitivity at 25C and 3V excitation * voltage. * TCVfss = -0.19 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package * stresses. * TCR = 0.24 %/C Based on current process (sensor element * resistivity). * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 460 Input Impedance of sensor at 25C. * Zoutp = 560 Output Impedance of sensor at 25C. * Zoutn = 546 Output Impedance of sensor at 25C. * Vsnom = 3 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX12/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 5.5m .PARAM TCVfss -0.19E-2 .PARAM Tn 25 .PARAM Voff 20m .PARAM TCVoff 0.015m .PARAM Vsnom 3 .PARAM Zin 460 .PARAM Zoutp 560 .PARAM Zoutn 546 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} TC = 0.0024 CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} TC = 0.0024 ROUT- 9 4 {Zoutn} TC = 0.0024 * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. * It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of the * sensor model. * Voff = 20 mV Zero pressure offset at 25C and 3V excitation * voltage. * SENS = 1.2 mV/kPa Pressure sensitivity at 25C and 3V excitation voltage. * TCVfss = -0.19 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package stresses. * TCR = 0.24 %/C Based on current process (sensor element resistivity). * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 450 Input Impedance of sensor at 25C. * Zoutp = 847 Output Impedance of sensor at 25C. * Zoutn = 953 Output Impedance of sensor at 25C. * Vsnom = 3 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX50/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 1.2m .PARAM TCVfss -0.19E-2 .PARAM Tn 25 .PARAM Voff 20m .PARAM TCVoff 0.015m .PARAM Vsnom 3 .PARAM Zin 450 .PARAM Zoutp 847 .PARAM Zoutn 953 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} TC = 0.0024 CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} TC = 0.0024 ROUT- 9 4 {Zoutn} TC = 0.0024 * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage.It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 20 mV Zero pressure offset at 25C and 3V excitation * voltage. * SENS = 0.6 mV/kPa Pressure sensitivity at 25C and 3V excitation * voltage. * TCVfss = -0.19 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package stresses. * TCR = 0.24 %/C Based on current process (sensor element * resistivity). * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 456 Input Impedance of sensor at 25C. * Zoutp = 707 Output Impedance of sensor at 25C. * Zoutn = 826 Output Impedance of sensor at 25C. * Vsnom = 3 V Nominal supply (excitation) voltage for data sheet * specifications. .SUBCKT MPX100/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.6m .PARAM TCVfss -0.19E-2 .PARAM Tn 25 .PARAM Voff 20m .PARAM TCVoff 0.015m .PARAM Vsnom 3 .PARAM Zin 456 .PARAM Zoutp 707 .PARAM Zoutn 826 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} TC = 0.0024 CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} TC = 0.0024 ROUT- 9 4 {Zoutn} TC = 0.0024 * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. * It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 20 mV Zero pressure offset at 25C and 3V excitation * voltage. * SENS = 0.3 mV/kPa Pressure sensitivity at 25C and 3V excitation * voltage. * TCVfss = -0.19 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package stresses. * TCR = 0.24 %/C Based on current process (sensor element resistivity). * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 460 Input Impedance of sensor at 25C. * Zoutp = 800 Output Impedance of sensor at 25C. * Zoutn = 910 Output Impedance of sensor at 25C. * Vsnom = 3 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX200/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.3m .PARAM TCVfss -0.19E-2 .PARAM Tn 25 .PARAM Voff 20m .PARAM TCVoff 0.015m .PARAM Vsnom 3 .PARAM Zin 460 .PARAM Zoutp 800 .PARAM Zoutn 910 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} TC = 0.0024 CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} TC = 0.0024 ROUT- 9 4 {Zoutn} TC = 0.0024 * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. * It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of the * sensor model. * Voff = 20 mV Zero pressure offset at 25C and 3V excitation * voltage. * SENS = 86 µV/kPa Pressure sensitivity at 25C and 3V excitation * voltage. * TCVfss = -0.18 %/C Based on current process (depth of sensor element and * doping). * TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package stresses. * TCR = 0.37 %/C Based on current process (sensor element resistivity). * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 410 Input Impedance of sensor at 25C. * Zoutp = 681 Output Impedance of sensor at 25C. * Zoutn = 726 Output Impedance of sensor at 25C. * Vsnom = 3 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX700/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.086m .PARAM TCVfss -0.18E-2 .PARAM Tn 25 .PARAM Voff 20m .PARAM TCVoff 0.015m .PARAM Vsnom 3 .PARAM Zin 410 .PARAM Zoutp 681 .PARAM Zoutn 726 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} TC = 0.0037 CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} TC = 0.0037 ROUT- 9 4 {Zoutn} TC = 0.0037 * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 2.5 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.01176 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 1800 Input Impedance of sensor at 25C. * Zoutp = 2200 Output Impedance of sensor at 25C. * Zoutn = 1400 Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX2010/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 2.5m .PARAM TCVfss -0.01176E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.01176m .PARAM Vsnom 10 .PARAM Zin 1800 .PARAM Zoutp 2200 .PARAM Zoutn 1400 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 2.5 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.01176 %/C Based on current process (depth of sensor element and doping). * TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 1800 Input Impedance of sensor at 25C. * Zoutp = 2200 Output Impedance of sensor at 25C. * Zoutn = 1400 Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX2012/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 2.5m .PARAM TCVfss -0.01176E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.01176m .PARAM Vsnom 10 .PARAM Zin 1800 .PARAM Zoutp 2200 .PARAM Zoutn 1400 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 0.8 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.01176 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 1600 Input Impedance of sensor at 25C. * Zoutp = 1800 Output Impedance of sensor at 25C. * Zoutn = 800 Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX2050/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.8m .PARAM TCVfss -0.01176E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.01176m .PARAM Vsnom 10 .PARAM Zin 1600 .PARAM Zoutp 1800 .PARAM Zoutn 800 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage.It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 0.8 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.01176 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package * stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 1600 Input Impedance of sensor at 25C. * Zoutp = 1800 Output Impedance of sensor at 25C. * Zoutn = 800 Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX2051/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.8m .PARAM TCVfss -0.01176E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.01176m .PARAM Vsnom 10 .PARAM Zin 1600 .PARAM Zoutp 1800 .PARAM Zoutn 800 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 0.8 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.01176 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package * stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 1600 Input Impedance of sensor at 25C. * Zoutp = 1800 Output Impedance of sensor at 25C. * Zoutn = 800 Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX2052/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.8m .PARAM TCVfss -0.01176E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.01176m .PARAM Vsnom 10 .PARAM Zin 1600 .PARAM Zoutp 1800 .PARAM Zoutn 800 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 0.4 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.01176 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package * stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 1800 Input Impedance of sensor at 25C. * Zoutp = 2200 Output Impedance of sensor at 25C. * Zoutn = 850 Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX2100/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.4m .PARAM TCVfss -0.01176E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.01176m .PARAM Vsnom 10 .PARAM Zin 1800 .PARAM Zoutp 2200 .PARAM Zoutn 850 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 0.4 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.01176 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package * stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 1800 Input Impedance of sensor at 25C. * Zoutp = 2200 Output Impedance of sensor at 25C. * Zoutn = 850 Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX2101/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.4m .PARAM TCVfss -0.01176E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.01176m .PARAM Vsnom 10 .PARAM Zin 1800 .PARAM Zoutp 2200 .PARAM Zoutn 850 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 0.2 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.0023529 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.0023529 mV/C Due to CTE mismatches and thermal package * stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 1900 Input Impedance of sensor at 25C. * Zoutp = 2200 Output Impedance of sensor at 25C. * Zoutn = 850 Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX2200/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.2m .PARAM TCVfss -0.0023529E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.0023529m .PARAM Vsnom 10 .PARAM Zin 1900 .PARAM Zoutp 2200 .PARAM Zoutn 850 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation voltage. * It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 0.2 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.0023529 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.0023529 mV/C Due to CTE mismatches and thermal package * stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 1900 Input Impedance of sensor at 25C. * Zoutp = 2200 Output Impedance of sensor at 25C. * Zoutn = 850 Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX2201/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.2m .PARAM TCVfss -0.0023529E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.0023529m .PARAM Vsnom 10 .PARAM Zin 1900 .PARAM Zoutp 2200 .PARAM Zoutn 850 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation voltage. * It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Offset = -0.1518 Voff/Vsnom at 25C & 5.1 V excitation voltage. * SENS = 54 mV/kPa Pressure sensitivity at 25C & 5.1 V excitation voltage. * Perror = 1.5 kPa Pressure error obtained from data book, ±1.5 kPa * Error = V(11) Error term for Vout * Vs = V(3,2) Supply Voltage * Vsnom = 5.1 V Nominal DC Supply Voltage * P = V(12,8) The voltage (represents pressure) at the internal * pressure node of the sensor model. * .SUBCKT MPX4100/MC 1 2 3 7 8 * * Define Parameter values * .PARAM SENS 54m .PARAM Offset -0.1518 .PARAM Vsnom 5.1 .PARAM Perror 1.5 * * Tmult() function * etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3) rtmult 9 0 1meg * * Sensitivity adjustment * evs 10 0 value = {v(3) * SENS/Vsnom} rvs 10 0 1meg * * Final error voltage expression * Error 11 0 value = {{Perror} * v(9) * v(10)} rError 11 0 1meg rs 3 2 1meg * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response * of 1ms is achieved. * RP1 7 12 1 RP2 12 8 1000G CP 12 8 0.45mF * * Output * Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)} * .ENDS *$ * * Parameter Comments * ------------------ * Offset = -0.10941 Voff/Vsnom at 25C and 5.1 V excitation voltage * SENS = 54 mV/kPa Pressure sensitivity at 25C and 5.1 V excitation * voltage. * P = V(12,8) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Perror = 1.5 kPa Pressure error obtained from data book, ±1.5 kPa * Error = V(11) Error term for Vout * Vs = V(3,2) Supply Voltage * Vsnom = 5.1 V Nominal DC Supply Voltage * .SUBCKT MPX4101/MC 1 2 3 7 8 * * Define Parameter values * .PARAM SENS 54m .PARAM Offset -0.10941 .PARAM Vsnom 5.1 .PARAM Perror 1.5 * * Tmult() function * etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3) rtmult 9 0 1meg * * Sensitivity adjustment * evs 10 0 value = {v(3) * SENS/Vsnom} rvs 10 0 1meg * * Final error voltage expression * Error 11 0 value = {{Perror} * v(9) * v(10)} rError 11 0 1meg rs 3 2 1meg * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 7 12 1 RP2 12 8 1000G CP 12 8 0.45mF * * Output * Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)} * .ENDS *$ * * Parameter Comments * ------------------ * Offset = -0.095 Voff/Vs at 25C and 5.1 V excitation voltage. * SENS = 45.9 mV/kPa Pressure sensitivity at 25C and 5.1 V excitation * voltage. * P = V(12,8) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Perror = 1.5 kPa Pressure error obtained from data book, ±2.5 kPa * Error = V(11) Error term for Vout * Vs = V(3,2) Supply Voltage * Vsnom = 5.1 V Nominal DC Supply Voltage * .SUBCKT MPX4115/MC 1 2 3 7 8 * * Define Parameter values * .PARAM SENS 45.9m .PARAM Offset -0.095 .PARAM Vsnom 5.1 .PARAM Perror 1.5 * * Tmult() function * etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3) rtmult 9 0 1meg * * Sensitivity adjustment * evs 10 0 value = {v(3) * SENS/Vsnom} rvs 10 0 1meg * * Final error voltage expression * Error 11 0 value = {{Perror} * v(9) * v(10)} rError 11 0 1meg rs 3 2 1meg * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 7 12 1 RP2 12 8 1000G CP 12 8 0.45mF * * Output * Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)} * .ENDS *$ * * Parameter Comments * ------------------ * Offset = -0.04 Voff/Vs at 25C and 5.1 V excitation voltage. * SENS = 20.4 mV/kPa Pressure sensitivity at 25C and 5.1 V excitation * voltage. * P = V(12,8) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Perror = 3.45 kPa Pressure error obtained from data book, ±3.45 kPa * Error = V(11) Error term for Vout * Vs = V(3,2) Supply Voltage * Vsnom = 5.1 V Nominal DC Supply Voltage * .SUBCKT MPX4250/MC 1 2 3 7 8 * * Define Parameter values * .PARAM SENS 20.4m .PARAM Offset -0.04 .PARAM Vsnom 5.1 .PARAM Perror 3.45 * * Tmult() function * etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3) rtmult 9 0 1meg * * Sensitivity adjustment * evs 10 0 value = {v(3) * SENS/Vsnom} rvs 10 0 1meg * * Final error voltage expression * Error 11 0 value = {{Perror} * v(9) * v(10)} rError 11 0 1meg rs 3 2 1meg * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 7 12 1 RP2 12 8 1000G CP 12 8 0.45mF * * Output * Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)} * .ENDS *$ * * Parameter Comments * ------------------ * Offset = Voff/Vsnom Voff/Vs at 25°C and 5.0 V excitation voltage. * Voff = 0.2 V Zero Pressure Offset at 25°C and 5.0 V excitation * voltage. * SENS = 90 mV/kPa Pressure sensitivity at 25°C and 5.0 V excitation * voltage. * P = V(12,8) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Perror = 1.25 kPa Pressure error obtained from data book, ±1.25 kPa * Error = V(11) Error term for Vout * Vs = V(3,2) Supply Voltage * Vsnom = 5.0 V Nominal DC Supply Voltage * .SUBCKT MPX5050/MC 1 2 3 7 8 * * Define Parameter values * .PARAM SENS 90m .PARAM Voff 0.2 .PARAM Vsnom 5.0 .PARAM Perror 1.25 * * Tmult() function * etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3) rtmult 9 0 1meg * * Sensitivity adjustment * evs 10 0 value = {v(3) * SENS/Vsnom} rvs 10 0 1meg * * Final error voltage expression * Error 11 0 value = {{Perror} * v(9) * v(10)} rError 11 0 1meg rs 3 2 1meg * * Pressure Input * -------------- * An arbitrary small number of 1_ is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G_ is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 7 12 1 RP2 12 8 1000G CP 12 8 0.45mF * * Output * Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Voff}/{Vsnom})+v(11)} .ENDS *$ * * Parameter Comments * ------------------ * Offset = -0.095 Voff/Vs at 25C and 5.0 V excitation voltage. * SENS = 45 mV/kPa Pressure sensitivity at 25C & 5.0 V excitation * voltage. * Perror = 2.5 kPa Pressure error obtained from data book, ±2.5 kPa * Error = V(11) Error term for Vout * Vs = V(3,2) Supply Voltage * Vsnom = 5.0 V Nominal DC Supply Voltage * P = V(12,8) The voltage (represents pressure) at the internal * pressure node of the sensor model. * .SUBCKT MPX5100A/MC 1 2 3 7 8 * * Define Parameter values * .PARAM SENS 45m .PARAM Offset -0.095 .PARAM Vsnom 5.0 .PARAM Perror 2.5 * * Tmult() function * etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3) rtmult 9 0 1meg * * Sensitivity adjustment * evs 10 0 value = {v(3) * SENS/Vsnom} rvs 10 0 1meg * * Final error voltage expression * Error 11 0 value = {{Perror} * v(9) * v(10)} rError 11 0 1meg rs 3 2 1meg * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response * of 1ms is achieved. * RP1 7 12 1 RP2 12 8 1000G CP 12 8 0.45mF * * Output * Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)} * .ENDS *$ * * Parameter Comments * ------------------ * Offset = 0.04 Voff/Vs at 25C & 5.0 V excitation voltage. * SENS = 45 mV/kPa Pressure sensitivity at 25C & 5.0 V excitation * voltage. * Perror = 2.5 kPa Pressure error obtained from data book, ±2.5 kPa * Error = V(11) Error term for Vout * Vs = V(3,2) Supply Voltage * Vsnom = 5.0 V Nominal DC Supply Voltage * P = V(12,8) The voltage (represents pressure) at the internal * pressure node of the sensor model. * .SUBCKT MPX5100D/MC 1 2 3 7 8 * * Define Parameter values * .PARAM SENS 45m .PARAM Offset 0.04 .PARAM Vsnom 5.0 .PARAM Perror 2.5 * * Tmult() function * etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3) rtmult 9 0 1meg * * Sensitivity adjustment * evs 10 0 value = {v(3) * SENS/Vsnom} rvs 10 0 1meg * * Final error voltage expression * Error 11 0 value = {{Perror} * v(9) * v(10)} rError 11 0 1meg rs 3 2 1meg * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response * of 1ms is achieved. * RP1 7 12 1 RP2 12 8 1000G CP 12 8 0.45mF * * Output * Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node * of the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 0.8 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.01176 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package * stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 10 k Input Impedance of sensor at 25C. * Zoutp = 3.70 k Output Impedance of sensor at 25C. * Zoutn = 3100 Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data * sheet specifications. * .SUBCKT MPX7050/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.8m .PARAM TCVfss -0.01176E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.01176m .PARAM Vsnom 10 .PARAM Zin 10K .PARAM Zoutp 3.70K .PARAM Zoutn 3100 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 0.4 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.01176 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package * stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 10 k Input Impedance of sensor at 25C. * Zoutp = 4.40 k Output Impedance of sensor at 25C. * Zoutn = 3500 Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX7100/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.4m .PARAM TCVfss -0.01176E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.01176m .PARAM Vsnom 10 .PARAM Zin 10K .PARAM Zoutp 4.40K .PARAM Zoutn 3500 * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$ * * Parameter Comments * ------------------ * Vs = V(11,1) The voltage at the internal supply voltage node of * the sensor model. * Voff = 0 mV Zero pressure offset at 25C and 10V excitation * voltage. * SENS = 0.2 mV/kPa Pressure sensitivity at 25C and 10V excitation * voltage. * TCVfss = -0.01176 %/C Based on current process (depth of sensor element * and doping). * TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package * stresses. * Tn = 25C Reference temperature used in data sheet * specifications. * P = V(10,6) The voltage (represents pressure) at the internal * pressure node of the sensor model. * Zin = 10 k Input Impedance of sensor at 25C. * Zoutp = 4.5 k Output Impedance of sensor at 25C. * Zoutn = 3.5 k Output Impedance of sensor at 25C. * Vsnom = 10 V Nominal supply (excitation) voltage for data sheet * specifications. * .SUBCKT MPX7200/MC 1 2 3 4 5 6 * * Define Parameter values * .PARAM SENS 0.2m .PARAM TCVfss -0.01176E-2 .PARAM Tn 25 .PARAM Voff 0 .PARAM TCVoff 0.01176m .PARAM Vsnom 10 .PARAM Zin 10K .PARAM Zoutp 4.50K .PARAM Zoutn 3.50K * * Pressure Input * -------------- * An arbitrary small number of 1 is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G is chosen for RP2. * CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved. * RP1 5 10 1 RP2 6 10 1000G CP 6 10 0.45mF * * Supply Input * ------------ * A small value of 1 is chosen for RS1 so that the supply voltage is almost * 100% at dc. The users should change this value to the source resistance of * the voltage source they are using in order to see the electrical response * time. * RS2 = Zin. The value of the input resistance, Zin, is chosen based on the * data given by the data book. * A measured value of 20pF is assigned to CS. * RS1 3 11 1 RS2 1 11 {Zin} CS 1 11 20pF * * Output * ROUT+ 7 2 {Zoutp} ROUT- 9 4 {Zoutn} * * A typical value for the common mode voltage, Ecom, is half of the excitation * voltage. * It was modeled by splitting the output voltage source. * Ecom 8 0 value = {V(11,1)/2} Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) + + ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2} * .ENDS *$