* Library of Motorola Pressure Sensor Models
* $Revision: 1.1 $
* $Author: RPEREZ $
* $Date: 20 Apr 1998 09:06:22 $
*
*----------------------------------------------------------------------
*
* Motorola Pressure Sensor Macromodel Library
* Rev 1.0
*
* Macromodels, simulation models, or other models provided by
* Motorola, directly or indirectly, are not warranted by
* Motorola as fully representing all of the specifications and
* operating characteristics of the semiconductor product to
* which the model relates. Moreover, these models are
* furnished on an "as is" basis without support or warranty of
* any kind, either expressed or implied, regarding the use
* thereof and Motorola specifically disclaims all implied
* warranties of merchantability and fitness of the models for
* any purpose. Motorola does not assume any liability arising
* out of the application or use of the models including
* infringement of patents and copyrights nor does Motorola
* convey any license under its patents and copyrights or the
* rights of others. Motorola reserves the right to make
* changes without notice to any model.
*
* If you have any questions or suggestions, please contact
*
* Motorola Inc.
* Semiconductor Products Sector
* Sensor Products Division
* 5005 East McDowell Road
* Phoenix, AZ 85008
* (602) 244-4556
*
*
* Although macromodels can be a useful tool in evaluating
* device performance in various applications, they cannot
* model exact device performance under all conditions, nor are
* they intended to replace breadboarding for final
* verification.
*
* The purpose of this library is to model what the Motorola
* MPX series pressure sensor device data book represents.
*
* This library consists of three parts:
*
* 1. MPX Basic Pressure Sensors
* 2. MPX Compensated Pressure Sensors
* 3. MPX Integrated Pressure Sensors
*
* The MPX Basic Pressure Sensors and the MPX Compensated Pressure
* Sensors are jointly developed by Jeff Baum and Aiteen Zhang.
* The Integrated Pressure Sensors is developed by Aiteen Zhang
* using the transfer functions given in the device data book.
*
* In order to use this library, several statements are required in
* your source file (xxx.cir):
*
* 1) a subcircuit statement, X1
* to call the particular device model.
* 2) a library statement, .LIB
* to call this library.
*
* In addition, the pressure inputs (nodes 5 and 6 for basic and
* compensated sensor models, nodes 7 and 8 for the integrated
* sensor model) are intended to be connected to an independent
* voltage source that represents the differential pressure across
* the sensor device. A second independent voltage source can be
* connected from node 6 or 8 to circuit ground to represent the
* common mode pressure seen at both pressure inputs. Connecting
* node 6 or 8 directly to ground potential is analogous to applying
* an absolute or gage pressure to the sensor device.
*
*--------------------------------------------------------------------------
*
****** MPX Basic Pressure Sensors ******
*
* Author: Jeff Baum and Aiteen Zhang
* Date: November 11, 1994
* Revise: December 1, 1994
*
* MPX Basic Pressure Sensors consists of
* MPX10, MPX12, MPX50, MPX100, MPX200, MPX700
*
* The parameters in the MPX Basic Pressure Sensors were derived
* from the typical values in the data sheets for each part.
* Parameter tolerances have not been included for the purpose of
* Monte Carlo or Worst Case Analysis simulation.
*
* DEFINITIONS
* -----------
* The general equation that models the zero pressure offset, sensor
* sensitivity, temperature coefficients of offset and full-scale span,
* and the ratiometricity of certain parameters with sensor excitation
* voltage is:
*
* Vout = {SENS*[1+TCVfss*(TEMP-Tn)]*P+[Voff+TCVoff*(TEMP-Tn)]}*Vs/Vsnom
*
* where Vout is the differential sensor output voltage
* P is the internal applied pressure
*
* a voltage source is used as an input to the model to simulate pressure
*
*
* Vs = Internal Excitation Voltage
* Voff = Zero Pressure Offset
* SENS = Sensitivity, symbol in data book is V/P
* TCVfss = Temperature Coefficient of Full Scale Span
* TCVoff = Temperature Coefficient of Offset
* TCR = Temperature Coefficient of Resistance
* Tn = Nominal Temperature
* Zin = Input Impedance
* Zoutp = Single Ended Output Impedance
* (S+ to ground, with Vcc and ground shorted)
* Zoutn = Single Ended Output Impedance
* (S- to ground, with Vcc and ground shorted)
* Vsnom = Nominal Supply Voltage
* V(a,b) = Voltage across nodes a and b
* TEMP = PSpice System Variable for Temperature
*
* Connections:
* 1 - Ground
* 2 - Positive Output
* 3 - Supply Voltage
* 4 - Negative Output
* 5 - Positive Pressure Input
* 6 - Negative Pressure Input
*
*
****** MPX Compensated Pressure Sensors ******
*
* Author: Jeff Baum and Aiteen Zhang
* Date: November 28, 1994
* Revise:
*
* MPX Compensated Pressure Sensors consists of
* MPX2010, MPX2012, MPX2050 MPX2051, MPX2052, MPX2100, MPX2101
* MPX2200, MPX2201, MPX7050, MPX7100, MPX7200
*
* The parameters in the MPX Compensated Pressure Sensors were derived
* from the typical values in the data sheets for each part.
* Parameter tolerances have not been included for the purpose of
* Monte Carlo or Worst Case Analysis simulation.
*
* DEFINITIONS
* -----------
* The general equation that models the zero pressure offset, sensor
* sensitivity, temperature coefficients of offset and full-scale span,
* and the ratiometricity of certain parameters with sensor excitation
* voltage is:
*
* Vout = {SENS*[1+TCVfss*(TEMP-Tn)]*P+[Voff+TCVoff*(TEMP-Tn)]}*Vs/Vsnom
*
* where Vout is the differential sensor output voltage
* P is the internal applied pressure
*
* a voltage source is used as an input to the model to simulate pressure
*
*
* Vs = Internal Excitation Voltage
* Voff = Zero Pressure Offset
* SENS = Sensitivity, symbol in data book is V/P
* TCVfss = Temperature Coefficient of Full Scale Span
* TCVoff = Temperature Coefficient of Offset
* Tn = Nominal Temperature
* Zin = Input Impedance
* Zoutp = Single Ended Output Impedance
* (S+ to ground, with Vcc and ground shorted)
* Zoutn = Single Ended Output Impedance
* (S- to ground, with Vcc and ground shorted)
* Vsnom = Nominal Supply Voltage
* V(a,b) = Voltage across nodes a and b
* TEMP = PSpice System Variable for Temperature
*
* Connections:
* 1 - Ground
* 2 - Positive Output
* 3 - Supply Voltage
* 4 - Negative Output
* 5 - Positive Pressure Input
* 6 - Negative Pressure Input
*
*
****** MPX Integrated Pressure Sensors ******
*
* Author: Aiteen Zhang
* Date: December 5, 1994
* Revise: December 19, 1994
*
* MPX Integrated Pressure Sensors consists of
* MPX4100, MPX4101, MPX4115, MPX4250, MPX5050, MPX5100A, MPX5100D
*
* The parameters in the MPX Integrated Pressure Sensors were derived
* from the data sheets for each part.
*
* DEFINITIONS
* -----------
* The general transfer function that models the integrated parts is:
*
* Vout = Vs (P * SENS/Vsnom + Offset) + Error
* Offset = Voff/Vsnom
* Vs = V(3,2)
* P = V(12,8)
* Error = Perror * Tmult * (SENS/Vsnom) * Vs
*
* where Vout is the single ended sensor output voltage
* P is the internal applied pressure
*
* a voltage source is used as an input to the model to simulate pressure
*
* Vs = Supply Voltage
* P = The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Voff = Zero Pressure Offset
* SENS = Sensitivity, symbol in data book is V/P
* Vsnom = Nominal Supply Voltage
* V(a,b) = Voltage across nodes a and b
* TEMP = PSpice System Variable for Temperature
*
* Connections:
* 1 - Output
* 2 - Ground
* 3 - Supply Voltage
* 7 - Positive Pressure Input
* 8 - Negative Pressure Input
*
*
*--------------------------------------------------------------------------
*
* The authors would like to thank Ron Kielkowski from RCG Research, Inc.,
* for his excellent coaching during the Pspice class and Char Walker for
* editing the library and putting it in the required format.
*
*--------------------------------------------------------------------------
* Motorola reserves the right to make changes without further notice to any
* products herein. Motorola makes no warranty, representation or guarantee
* regarding the suitability of its products for any particular purpose, nor
* does Motorola assume any liability arising out of the application or use
* of any product or circuit, and specifically disclaims any and all
* liability, including without limitation consequential or incidental
* damages. "Typical" parameters can and do vary in different applications.
* All operating parameters, including "Typicals" must be validated for each
* customer application by customer's technical experts. Motorola does not
* convey any license under its patent rights nor the rights of others.
* Motorola products are not designed, intended, or authorized for use as
* components in systems intended for surgical implant into the body, or
* other applications intended to support or sustain life, or for any
* other application in which the failure of the Motorola product could
* create a situation where personal injury or death may occur. Should
* Buyer purchase or use Motorola products for any such unintended or
* unauthorized application, Buyer shall indemnify and hold Motorola and
* its officers, employees, subsidiaries, affiliates, and distributors
* harmless against all claims, costs, damages, and expenses, and
* reasonable attorney fees arising out of, directly or indirectly,
* any claim of personal injury or death associated with such
* unintended or unauthorized use, even if such claim alleges that
* Motorola was negligent regarding the design or manufacture of the
* part. Motorola and (Motorola logo symbol) are registered trademarks of
* Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative
* Action Employer.
*
* Pspice is a registered trademark of OrCAD Incorporated.
*
*******************************************************************************
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node
* of the sensor model.
* Voff = 20 mV Zero pressure offset at 25C and 3V excitation
* voltage.
* SENS = 3.5 mV/kPa Pressure sensitivity at 25C and 3V excitation
* voltage.
* TCVfss = -0.19 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package stresses.
* TCR = 0.24 %/C Based on current process (sensor element resistivity).
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 459 Input Impedance of sensor at 25C.
* Zoutp = 579 Output Impedance of sensor at 25C.
* Zoutn = 622 Output Impedance of sensor at 25C.
* Vsnom = 3 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX10/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 3.5m
.PARAM TCVfss -0.19E-2
.PARAM Tn 25
.PARAM Voff 20m
.PARAM TCVoff 0.015m
.PARAM Vsnom 3
.PARAM Zin 459
.PARAM Zoutp 579
.PARAM Zoutn 622
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response
* of 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is
* almost 100% at dc. The users should change this value to the source
* resistance of the voltage source they are using in order to see the
* electrical response time. RS2 = Zin. The value of the input resistance,
* Zin, is chosen based on the data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin} TC = 0.0024
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp} TC = 0.0024
ROUT- 9 4 {Zoutn} TC = 0.0024
*
* A typical value for the common mode voltage, Ecom, is half of the
* excitation voltage. It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 20 mV Zero pressure offset at 25C and 3V excitation
* voltage.
* SENS = 5.5 mV/kPa Pressure sensitivity at 25C and 3V excitation
* voltage.
* TCVfss = -0.19 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package
* stresses.
* TCR = 0.24 %/C Based on current process (sensor element
* resistivity).
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 460 Input Impedance of sensor at 25C.
* Zoutp = 560 Output Impedance of sensor at 25C.
* Zoutn = 546 Output Impedance of sensor at 25C.
* Vsnom = 3 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX12/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 5.5m
.PARAM TCVfss -0.19E-2
.PARAM Tn 25
.PARAM Voff 20m
.PARAM TCVoff 0.015m
.PARAM Vsnom 3
.PARAM Zin 460
.PARAM Zoutp 560
.PARAM Zoutn 546
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin} TC = 0.0024
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp} TC = 0.0024
ROUT- 9 4 {Zoutn} TC = 0.0024
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage.
* It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of the
* sensor model.
* Voff = 20 mV Zero pressure offset at 25C and 3V excitation
* voltage.
* SENS = 1.2 mV/kPa Pressure sensitivity at 25C and 3V excitation
voltage.
* TCVfss = -0.19 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package stresses.
* TCR = 0.24 %/C Based on current process (sensor element resistivity).
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 450 Input Impedance of sensor at 25C.
* Zoutp = 847 Output Impedance of sensor at 25C.
* Zoutn = 953 Output Impedance of sensor at 25C.
* Vsnom = 3 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX50/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 1.2m
.PARAM TCVfss -0.19E-2
.PARAM Tn 25
.PARAM Voff 20m
.PARAM TCVoff 0.015m
.PARAM Vsnom 3
.PARAM Zin 450
.PARAM Zoutp 847
.PARAM Zoutn 953
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin} TC = 0.0024
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp} TC = 0.0024
ROUT- 9 4 {Zoutn} TC = 0.0024
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage.It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 20 mV Zero pressure offset at 25C and 3V excitation
* voltage.
* SENS = 0.6 mV/kPa Pressure sensitivity at 25C and 3V excitation
* voltage.
* TCVfss = -0.19 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package stresses.
* TCR = 0.24 %/C Based on current process (sensor element
* resistivity).
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 456 Input Impedance of sensor at 25C.
* Zoutp = 707 Output Impedance of sensor at 25C.
* Zoutn = 826 Output Impedance of sensor at 25C.
* Vsnom = 3 V Nominal supply (excitation) voltage for data sheet
* specifications.
.SUBCKT MPX100/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.6m
.PARAM TCVfss -0.19E-2
.PARAM Tn 25
.PARAM Voff 20m
.PARAM TCVoff 0.015m
.PARAM Vsnom 3
.PARAM Zin 456
.PARAM Zoutp 707
.PARAM Zoutn 826
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin} TC = 0.0024
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp} TC = 0.0024
ROUT- 9 4 {Zoutn} TC = 0.0024
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage.
* It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 20 mV Zero pressure offset at 25C and 3V excitation
* voltage.
* SENS = 0.3 mV/kPa Pressure sensitivity at 25C and 3V excitation
* voltage.
* TCVfss = -0.19 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package stresses.
* TCR = 0.24 %/C Based on current process (sensor element resistivity).
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 460 Input Impedance of sensor at 25C.
* Zoutp = 800 Output Impedance of sensor at 25C.
* Zoutn = 910 Output Impedance of sensor at 25C.
* Vsnom = 3 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX200/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.3m
.PARAM TCVfss -0.19E-2
.PARAM Tn 25
.PARAM Voff 20m
.PARAM TCVoff 0.015m
.PARAM Vsnom 3
.PARAM Zin 460
.PARAM Zoutp 800
.PARAM Zoutn 910
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin} TC = 0.0024
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp} TC = 0.0024
ROUT- 9 4 {Zoutn} TC = 0.0024
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage.
* It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of the
* sensor model.
* Voff = 20 mV Zero pressure offset at 25C and 3V excitation
* voltage.
* SENS = 86 µV/kPa Pressure sensitivity at 25C and 3V excitation
* voltage.
* TCVfss = -0.18 %/C Based on current process (depth of sensor element and
* doping).
* TCVoff = 0.015 mV/C Due to CTE mismatches and thermal package stresses.
* TCR = 0.37 %/C Based on current process (sensor element resistivity).
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 410 Input Impedance of sensor at 25C.
* Zoutp = 681 Output Impedance of sensor at 25C.
* Zoutn = 726 Output Impedance of sensor at 25C.
* Vsnom = 3 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX700/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.086m
.PARAM TCVfss -0.18E-2
.PARAM Tn 25
.PARAM Voff 20m
.PARAM TCVoff 0.015m
.PARAM Vsnom 3
.PARAM Zin 410
.PARAM Zoutp 681
.PARAM Zoutn 726
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin} TC = 0.0037
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp} TC = 0.0037
ROUT- 9 4 {Zoutn} TC = 0.0037
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage. It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 2.5 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.01176 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 1800 Input Impedance of sensor at 25C.
* Zoutp = 2200 Output Impedance of sensor at 25C.
* Zoutn = 1400 Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX2010/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 2.5m
.PARAM TCVfss -0.01176E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.01176m
.PARAM Vsnom 10
.PARAM Zin 1800
.PARAM Zoutp 2200
.PARAM Zoutn 1400
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage. It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 2.5 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.01176 %/C Based on current process (depth of sensor element and doping).
* TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 1800 Input Impedance of sensor at 25C.
* Zoutp = 2200 Output Impedance of sensor at 25C.
* Zoutn = 1400 Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX2012/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 2.5m
.PARAM TCVfss -0.01176E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.01176m
.PARAM Vsnom 10
.PARAM Zin 1800
.PARAM Zoutp 2200
.PARAM Zoutn 1400
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage. It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 0.8 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.01176 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 1600 Input Impedance of sensor at 25C.
* Zoutp = 1800 Output Impedance of sensor at 25C.
* Zoutn = 800 Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX2050/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.8m
.PARAM TCVfss -0.01176E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.01176m
.PARAM Vsnom 10
.PARAM Zin 1600
.PARAM Zoutp 1800
.PARAM Zoutn 800
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage.It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 0.8 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.01176 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package
* stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 1600 Input Impedance of sensor at 25C.
* Zoutp = 1800 Output Impedance of sensor at 25C.
* Zoutn = 800 Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX2051/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.8m
.PARAM TCVfss -0.01176E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.01176m
.PARAM Vsnom 10
.PARAM Zin 1600
.PARAM Zoutp 1800
.PARAM Zoutn 800
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage. It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 0.8 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.01176 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package
* stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 1600 Input Impedance of sensor at 25C.
* Zoutp = 1800 Output Impedance of sensor at 25C.
* Zoutn = 800 Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX2052/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.8m
.PARAM TCVfss -0.01176E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.01176m
.PARAM Vsnom 10
.PARAM Zin 1600
.PARAM Zoutp 1800
.PARAM Zoutn 800
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage. It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 0.4 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.01176 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package
* stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 1800 Input Impedance of sensor at 25C.
* Zoutp = 2200 Output Impedance of sensor at 25C.
* Zoutn = 850 Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX2100/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.4m
.PARAM TCVfss -0.01176E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.01176m
.PARAM Vsnom 10
.PARAM Zin 1800
.PARAM Zoutp 2200
.PARAM Zoutn 850
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage. It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 0.4 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.01176 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package
* stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 1800 Input Impedance of sensor at 25C.
* Zoutp = 2200 Output Impedance of sensor at 25C.
* Zoutn = 850 Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX2101/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.4m
.PARAM TCVfss -0.01176E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.01176m
.PARAM Vsnom 10
.PARAM Zin 1800
.PARAM Zoutp 2200
.PARAM Zoutn 850
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage. It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 0.2 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.0023529 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.0023529 mV/C Due to CTE mismatches and thermal package
* stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 1900 Input Impedance of sensor at 25C.
* Zoutp = 2200 Output Impedance of sensor at 25C.
* Zoutn = 850 Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX2200/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.2m
.PARAM TCVfss -0.0023529E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.0023529m
.PARAM Vsnom 10
.PARAM Zin 1900
.PARAM Zoutp 2200
.PARAM Zoutn 850
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation voltage.
* It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 0.2 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.0023529 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.0023529 mV/C Due to CTE mismatches and thermal package
* stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 1900 Input Impedance of sensor at 25C.
* Zoutp = 2200 Output Impedance of sensor at 25C.
* Zoutn = 850 Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX2201/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.2m
.PARAM TCVfss -0.0023529E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.0023529m
.PARAM Vsnom 10
.PARAM Zin 1900
.PARAM Zoutp 2200
.PARAM Zoutn 850
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation voltage.
* It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Offset = -0.1518 Voff/Vsnom at 25C & 5.1 V excitation voltage.
* SENS = 54 mV/kPa Pressure sensitivity at 25C & 5.1 V excitation voltage.
* Perror = 1.5 kPa Pressure error obtained from data book, ±1.5 kPa
* Error = V(11) Error term for Vout
* Vs = V(3,2) Supply Voltage
* Vsnom = 5.1 V Nominal DC Supply Voltage
* P = V(12,8) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
*
.SUBCKT MPX4100/MC 1 2 3 7 8
*
* Define Parameter values
*
.PARAM SENS 54m
.PARAM Offset -0.1518
.PARAM Vsnom 5.1
.PARAM Perror 1.5
*
* Tmult() function
*
etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3)
rtmult 9 0 1meg
*
* Sensitivity adjustment
*
evs 10 0 value = {v(3) * SENS/Vsnom}
rvs 10 0 1meg
*
* Final error voltage expression
*
Error 11 0 value = {{Perror} * v(9) * v(10)}
rError 11 0 1meg
rs 3 2 1meg
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response
* of 1ms is achieved.
*
RP1 7 12 1
RP2 12 8 1000G
CP 12 8 0.45mF
*
* Output
*
Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Offset = -0.10941 Voff/Vsnom at 25C and 5.1 V excitation voltage
* SENS = 54 mV/kPa Pressure sensitivity at 25C and 5.1 V excitation
* voltage.
* P = V(12,8) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Perror = 1.5 kPa Pressure error obtained from data book, ±1.5 kPa
* Error = V(11) Error term for Vout
* Vs = V(3,2) Supply Voltage
* Vsnom = 5.1 V Nominal DC Supply Voltage
*
.SUBCKT MPX4101/MC 1 2 3 7 8
*
* Define Parameter values
*
.PARAM SENS 54m
.PARAM Offset -0.10941
.PARAM Vsnom 5.1
.PARAM Perror 1.5
*
* Tmult() function
*
etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3)
rtmult 9 0 1meg
*
* Sensitivity adjustment
*
evs 10 0 value = {v(3) * SENS/Vsnom}
rvs 10 0 1meg
*
* Final error voltage expression
*
Error 11 0 value = {{Perror} * v(9) * v(10)}
rError 11 0 1meg
rs 3 2 1meg
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 7 12 1
RP2 12 8 1000G
CP 12 8 0.45mF
*
* Output
*
Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Offset = -0.095 Voff/Vs at 25C and 5.1 V excitation voltage.
* SENS = 45.9 mV/kPa Pressure sensitivity at 25C and 5.1 V excitation
* voltage.
* P = V(12,8) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Perror = 1.5 kPa Pressure error obtained from data book, ±2.5 kPa
* Error = V(11) Error term for Vout
* Vs = V(3,2) Supply Voltage
* Vsnom = 5.1 V Nominal DC Supply Voltage
*
.SUBCKT MPX4115/MC 1 2 3 7 8
*
* Define Parameter values
*
.PARAM SENS 45.9m
.PARAM Offset -0.095
.PARAM Vsnom 5.1
.PARAM Perror 1.5
*
* Tmult() function
*
etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3)
rtmult 9 0 1meg
*
* Sensitivity adjustment
*
evs 10 0 value = {v(3) * SENS/Vsnom}
rvs 10 0 1meg
*
* Final error voltage expression
*
Error 11 0 value = {{Perror} * v(9) * v(10)}
rError 11 0 1meg
rs 3 2 1meg
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 7 12 1
RP2 12 8 1000G
CP 12 8 0.45mF
*
* Output
*
Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Offset = -0.04 Voff/Vs at 25C and 5.1 V excitation voltage.
* SENS = 20.4 mV/kPa Pressure sensitivity at 25C and 5.1 V excitation
* voltage.
* P = V(12,8) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Perror = 3.45 kPa Pressure error obtained from data book, ±3.45 kPa
* Error = V(11) Error term for Vout
* Vs = V(3,2) Supply Voltage
* Vsnom = 5.1 V Nominal DC Supply Voltage
*
.SUBCKT MPX4250/MC 1 2 3 7 8
*
* Define Parameter values
*
.PARAM SENS 20.4m
.PARAM Offset -0.04
.PARAM Vsnom 5.1
.PARAM Perror 3.45
*
* Tmult() function
*
etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3)
rtmult 9 0 1meg
*
* Sensitivity adjustment
*
evs 10 0 value = {v(3) * SENS/Vsnom}
rvs 10 0 1meg
*
* Final error voltage expression
*
Error 11 0 value = {{Perror} * v(9) * v(10)}
rError 11 0 1meg
rs 3 2 1meg
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 7 12 1
RP2 12 8 1000G
CP 12 8 0.45mF
*
* Output
*
Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Offset = Voff/Vsnom Voff/Vs at 25°C and 5.0 V excitation voltage.
* Voff = 0.2 V Zero Pressure Offset at 25°C and 5.0 V excitation * voltage.
* SENS = 90 mV/kPa Pressure sensitivity at 25°C and 5.0 V excitation * voltage.
* P = V(12,8) The voltage (represents pressure) at the internal * pressure node of the sensor model.
* Perror = 1.25 kPa Pressure error obtained from data book, ±1.25 kPa * Error = V(11) Error term for Vout
* Vs = V(3,2) Supply Voltage
* Vsnom = 5.0 V Nominal DC Supply Voltage *
.SUBCKT MPX5050/MC 1 2 3 7 8
*
* Define Parameter values
*
.PARAM SENS 90m
.PARAM Voff 0.2
.PARAM Vsnom 5.0
.PARAM Perror 1.25
*
* Tmult() function
*
etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3)
rtmult 9 0 1meg
*
* Sensitivity adjustment
*
evs 10 0 value = {v(3) * SENS/Vsnom}
rvs 10 0 1meg
*
* Final error voltage expression
*
Error 11 0 value = {{Perror} * v(9) * v(10)}
rError 11 0 1meg
rs 3 2 1meg
*
* Pressure Input
* --------------
* An arbitrary small number of 1_ is chosen for RP1 for easy multiplication. * An arbitrary large number of 1000G_ is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of * 1ms is achieved.
*
RP1 7 12 1
RP2 12 8 1000G
CP 12 8 0.45mF
*
* Output
*
Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Voff}/{Vsnom})+v(11)}
.ENDS
*$
*
* Parameter Comments
* ------------------
* Offset = -0.095 Voff/Vs at 25C and 5.0 V excitation voltage.
* SENS = 45 mV/kPa Pressure sensitivity at 25C & 5.0 V excitation
* voltage.
* Perror = 2.5 kPa Pressure error obtained from data book, ±2.5 kPa
* Error = V(11) Error term for Vout
* Vs = V(3,2) Supply Voltage
* Vsnom = 5.0 V Nominal DC Supply Voltage
* P = V(12,8) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
*
.SUBCKT MPX5100A/MC 1 2 3 7 8
*
* Define Parameter values
*
.PARAM SENS 45m
.PARAM Offset -0.095
.PARAM Vsnom 5.0
.PARAM Perror 2.5
*
* Tmult() function
*
etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3)
rtmult 9 0 1meg
*
* Sensitivity adjustment
*
evs 10 0 value = {v(3) * SENS/Vsnom}
rvs 10 0 1meg
*
* Final error voltage expression
*
Error 11 0 value = {{Perror} * v(9) * v(10)}
rError 11 0 1meg
rs 3 2 1meg
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response
* of 1ms is achieved.
*
RP1 7 12 1
RP2 12 8 1000G
CP 12 8 0.45mF
*
* Output
*
Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Offset = 0.04 Voff/Vs at 25C & 5.0 V excitation voltage.
* SENS = 45 mV/kPa Pressure sensitivity at 25C & 5.0 V excitation
* voltage.
* Perror = 2.5 kPa Pressure error obtained from data book, ±2.5 kPa
* Error = V(11) Error term for Vout
* Vs = V(3,2) Supply Voltage
* Vsnom = 5.0 V Nominal DC Supply Voltage
* P = V(12,8) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
*
.SUBCKT MPX5100D/MC 1 2 3 7 8
*
* Define Parameter values
*
.PARAM SENS 45m
.PARAM Offset 0.04
.PARAM Vsnom 5.0
.PARAM Perror 2.5
*
* Tmult() function
*
etmult 9 0 table {TEMP} = (-40,-3) (0,-1.4) (10,1) (85,1) (125,3)
rtmult 9 0 1meg
*
* Sensitivity adjustment
*
evs 10 0 value = {v(3) * SENS/Vsnom}
rvs 10 0 1meg
*
* Final error voltage expression
*
Error 11 0 value = {{Perror} * v(9) * v(10)}
rError 11 0 1meg
rs 3 2 1meg
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response
* of 1ms is achieved.
*
RP1 7 12 1
RP2 12 8 1000G
CP 12 8 0.45mF
*
* Output
*
Eout 1 2 value = {v(3,2)*(v(12,8)*{SENS}/{Vsnom}+{Offset})+v(11)}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node
* of the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 0.8 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.01176 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package
* stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 10 k Input Impedance of sensor at 25C.
* Zoutp = 3.70 k Output Impedance of sensor at 25C.
* Zoutn = 3100 Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data
* sheet specifications.
*
.SUBCKT MPX7050/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.8m
.PARAM TCVfss -0.01176E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.01176m
.PARAM Vsnom 10
.PARAM Zin 10K
.PARAM Zoutp 3.70K
.PARAM Zoutn 3100
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage. It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 0.4 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.01176 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package
* stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 10 k Input Impedance of sensor at 25C.
* Zoutp = 4.40 k Output Impedance of sensor at 25C.
* Zoutn = 3500 Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX7100/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.4m
.PARAM TCVfss -0.01176E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.01176m
.PARAM Vsnom 10
.PARAM Zin 10K
.PARAM Zoutp 4.40K
.PARAM Zoutn 3500
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage. It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$
*
* Parameter Comments
* ------------------
* Vs = V(11,1) The voltage at the internal supply voltage node of
* the sensor model.
* Voff = 0 mV Zero pressure offset at 25C and 10V excitation
* voltage.
* SENS = 0.2 mV/kPa Pressure sensitivity at 25C and 10V excitation
* voltage.
* TCVfss = -0.01176 %/C Based on current process (depth of sensor element
* and doping).
* TCVoff = 0.01176 mV/C Due to CTE mismatches and thermal package
* stresses.
* Tn = 25C Reference temperature used in data sheet
* specifications.
* P = V(10,6) The voltage (represents pressure) at the internal
* pressure node of the sensor model.
* Zin = 10 k Input Impedance of sensor at 25C.
* Zoutp = 4.5 k Output Impedance of sensor at 25C.
* Zoutn = 3.5 k Output Impedance of sensor at 25C.
* Vsnom = 10 V Nominal supply (excitation) voltage for data sheet
* specifications.
*
.SUBCKT MPX7200/MC 1 2 3 4 5 6
*
* Define Parameter values
*
.PARAM SENS 0.2m
.PARAM TCVfss -0.01176E-2
.PARAM Tn 25
.PARAM Voff 0
.PARAM TCVoff 0.01176m
.PARAM Vsnom 10
.PARAM Zin 10K
.PARAM Zoutp 4.50K
.PARAM Zoutn 3.50K
*
* Pressure Input
* --------------
* An arbitrary small number of 1 is chosen for RP1 for easy multiplication.
* An arbitrary large number of 1000G is chosen for RP2.
* CP = 0.45mF is based on the data sheet so that a mechanical time response of
* 1ms is achieved.
*
RP1 5 10 1
RP2 6 10 1000G
CP 6 10 0.45mF
*
* Supply Input
* ------------
* A small value of 1 is chosen for RS1 so that the supply voltage is almost
* 100% at dc. The users should change this value to the source resistance of
* the voltage source they are using in order to see the electrical response
* time.
* RS2 = Zin. The value of the input resistance, Zin, is chosen based on the
* data given by the data book.
* A measured value of 20pF is assigned to CS.
*
RS1 3 11 1
RS2 1 11 {Zin}
CS 1 11 20pF
*
* Output
*
ROUT+ 7 2 {Zoutp}
ROUT- 9 4 {Zoutn}
*
* A typical value for the common mode voltage, Ecom, is half of the excitation
* voltage.
* It was modeled by splitting the output voltage source.
*
Ecom 8 0 value = {V(11,1)/2}
Ediff+ 7 8 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
Ediff- 8 9 value = {({SENS} * (1+{TCVfss}*(TEMP-{Tn})) * V(10,6) +
+ ({Voff}+{TCVoff}*(TEMP-{Tn}))) * V(11,1)/{Vsnom}/2}
*
.ENDS
*$