* Library of Motorola Power MOSFET Models * $Revision: 1.5 $ * $Author: ANW $ * $Date: 23 Feb 1995 18:37:58 $ *--------------------------------------------------------------------------- *************************************************** * * MOTOROLA/LAAS LIBRARY FOR MOTOROLA POWER MOSFET * (TMOS) SPICE MODEL * * USING SWITCHES FOR THE CGD CAPACITOR * * DEVELOPED BY LAAS / MOTOROLA TOULOUSE 1989 * * COPYING THIS LIBRARY IS WELCOMED AND ENCOURAGED, * BUT IT IS NOT FOR COMMERCIAL USE * *************************************************** *Motorola reserves the right to make changes without further *notice to any products herein to improve reliability, function or *design. Motorola does not assume any liability arising out of the *application or use of any product or circuit described herein; *neither does it convey any license under its patent rights nor the *rights of others. Motorola products are not authorized for use as *components in life support devices or systems intended for *surgical implant into the body or intended to support or sustain *life. Buyer agrees to notify Motorola of any such intended end *use whereupon Motorola shall determine availability and suitability *or its product or products for the use intended. Motorola is a *registered trademark of Motorola, Inc. Motorola, Inc. is an Equal *Employment Opportunity/Affirmative Action Employer. *************************************************** * *THIS FILE CONTAINS THE MODELS OF SEVERAL TMOS DEVICES *LISTED BELOW: *MTP3055E MTP15N06E MTP25N06L MTP25N06 IRF541 *MTP35N06E MTH40N06 MTH30N20 MTM15N40 MTP4N50 *MTH13N50 MTP6N60 MTM8N60 MTH8N60 MTP4N85 MTP3N100 *MTH5N100 MTP12P10 MTP2P50 * *------------------ ADDED TO TMOS.LIB VERSION 1------------ *MTP25N10 MTP2N50 MTP7N20 MTH7N45 MTD4N20 MTD2N50 *MTD5N06 MTP25N10E MTM26N40E MTD10N05E MTP15N05E *MTP50N05EL MTD3055EL MTP3055EL MTP40N06M MTP40N06M *MTM10N100E MTM24N50E MTP50N06E MTD4P06 MTD2955 MTP20P06 *MTP8P10 *-------------------------------------------------------- * *IN ORDER TO USE THIS LIBRARY YOU NEED TO PUT IN YOUR SOURCE FILE * XXX.CIR THE COMMAND * X1 2 1 3 MTP25N06L TO CALL THAT DEVICE * .LIB TMOS.LIB TO CALL THIS LIBRARY * *-------------------------------------------------------- *$ * *MTP3055E model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP3055E/MC 20 10 30 RG 10 1 10 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.32 KP=5.5 THETA=0.058 VMAX=1.5E5 LEVEL=3) CGS 1 3 300P RD 20 4 0.078 DDS 3 4 DDS .MODEL DDS D(BV=60 M=0.42 CJO=600P VJ=0.60) DBODY 3 20 DBODY .MODEL DBODY D(IS=1.1E-11 N=1.03 RS=0.050 TT=200N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 605P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.53 CJO=605P VJ=0.08) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------ *$ * *MTP15N06E model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) .SUBCKT MTP15N06E/MC 20 10 30 RG 10 1 10 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.12 KP=7.30 THETA=0.058 VMAX=1.2E5 LEVEL=3) CGS 1 3 500P RD 20 4 0.09 DDS 3 4 DDS .MODEL DDS D(BV=60 M=0.42 CJO=710P VJ=0.7) DBODY 3 20 DBODY .MODEL DBODY D(IS=1.8E-12 N=1.02 RS=0.06 TT=30N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 1000P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.564 CJO=1000P VJ=0.155) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------ *$ * *MTP25N06L model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP25N06L/MC 20 10 30 RG 10 1 7 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=1.7 KP=8 THETA=0.12 VMAX=5E6 LEVEL=3) CGS 1 3 1130P RD 20 4 0.015 DDS 3 4 DDS .MODEL DDS D(BV=60 M=0.357 CJO=1200P VJ=0.437) DBODY 3 20 DBODY .MODEL DBODY D(IS=9E-12 N=1.03 RS=0.02 TT=18N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 3040P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.53 CJO=3040P VJ=0.0774) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTP25N06 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP25N06/MC 20 10 30 RG 10 1 7 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.84 KP=7 THETA=0.058 VMAX=2E5 LEVEL=3) CGS 1 3 662P RD 20 4 0.04 DDS 3 4 DDS .MODEL DDS D(BV=60 M=0.3 CJO=1178P VJ=0.29) DBODY 3 20 DBODY .MODEL DBODY D(IS=4.5E-12 N=1.02 RS=0.025 TT=22N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 1320P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.548 CJO=1320P VJ=0.36) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTP35N06E model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP35N06E/MC 20 10 30 RG 10 1 7 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=2.81 KP=30.6 THETA=0.058 VMAX=0.7E5 LEVEL=3) CGS 1 3 1070P RD 20 4 0.046 DDS 3 4 DDS .MODEL DDS D(BV=60 M=0.44 CJO=2637P VJ=0.78) DBODY 3 20 DBODY .MODEL DBODY D(IS=8.2E-12 N=1.02 RS=0.05 TT=26N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 3780P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.66 CJO=3780P VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTH40N06 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTH40N06/MC 20 10 30 RG 10 1 12 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.77 KP=27.2 THETA=0.058 VMAX=1E5 LEVEL=3) CGS 1 3 1782P RD 20 4 0.015 DDS 3 4 DDS .MODEL DDS D(BV=60 M=0.364 CJO=4134P VJ=0.558) DBODY 3 20 DBODY .MODEL DBODY D(IS=2E-11 N=1.03 RS=0.014 TT=26N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 4N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 5840P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.55 CJO=5840P VJ=0.25) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTH30N20 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTH30N20/MC 20 10 30 RG 10 1 7 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.74 KP=19.3 THETA=0.058 VMAX=1.4E5 LEVEL=3) CGS 1 3 1580P RD 20 4 0.062 DDS 3 4 DDS .MODEL DDS D(BV=200 M=0.46 CJO=2594P VJ=0.748) DBODY 3 20 DBODY .MODEL DBODY D(IS=1.1E-11 N=1.03 RS=0.050 TT=200N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 4N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 5850P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.5 CJO=5850P VJ=0.032) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTM15N40 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTM15N40/MC 20 10 30 RG 10 1 8 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=2.86 KP=12.1 THETA=0.058 VMAX=1.5E5 LEVEL=3) CGS 1 3 1300P RD 20 4 0.22 DDS 3 4 DDS .MODEL DDS D(BV=400 M=0.41 CJO=989P VJ=0.443) DBODY 3 20 DBODY .MODEL DBODY D(IS=6.6E-12 N=1.02 RS=0.028 TT=340N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 10N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 7126P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.61 CJO=7126P VJ=0.071) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * * *MTP4N50 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP4N50/MC 20 10 30 RG 10 1 9 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.72 KP=2.86 THETA=0.058 VMAX=1.5E5 LEVEL=3) CGS 1 3 540P RD 20 4 1.09 DDS 3 4 DDS .MODEL DDS D(BV=500 M=0.47 CJO=376P VJ=0.526) DBODY 3 20 DBODY .MODEL DBODY D(IS=1.2E-11 N=1.05 RS=0.143 TT=1.2U) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 1740P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.543 CJO=1740P VJ=0.0132) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTH13N50 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTH13N50/MC 20 10 30 RG 10 1 10 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.46 KP=8.07 THETA=0.058 VMAX=1.5E5 LEVEL=3) CGS 1 3 1675P RD 20 4 0.25 DDS 3 4 DDS .MODEL DDS D(BV=500 M=0.5 CJO=995P VJ=0.77) DBODY 3 20 DBODY .MODEL DBODY D(IS=1.2E-11 N=1.02 RS=0.025 TT=877N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 8N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 7000P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.54 CJO=7000P VJ=0.021) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTP6N60 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP6N60/MC 20 10 30 RG 10 1 8 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.23 KP=5 THETA=0.058 VMAX=1.5E5 LEVEL=3) CGS 1 3 1116P RD 20 4 0.885 DDS 3 4 DDS .MODEL DDS D(BV=600 M=0.51 CJO=700P VJ=0.6) DBODY 3 20 DBODY .MODEL DBODY D(IS=1.3E-11 N=1.04 RS=0.214 TT=1.125U) RA 4 2 1E-3 RS 3 5 1M LS 5 30 4N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 3550P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.518 CJO=3550P VJ=0.0077) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTM8N60 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTM8N60/MC 20 10 30 RG 10 1 7 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.1 KP=7.6 THETA=0.058 VMAX=2.6E5 LEVEL=3) CGS 1 3 2683P RD 20 4 0.44 DDS 3 4 DDS .MODEL DDS D(BV=600 M=0.475 CJO=900P VJ=0.73) DBODY 3 20 DBODY .MODEL DBODY D(IS=9E-11 N=1.02 RS=0.06 TT=1.5U) RA 4 2 1E-3 RS 3 5 1M LS 5 30 11N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 5800P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.52 CJO=5800P VJ=0.0234) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------ *$ * *MTH8N60 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTH8N60/MC 20 10 30 RG 10 1 5 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.47 KP=7.43 THETA=0.058 VMAX=1.7E5 LEVEL=3) CGS 1 3 1700P RD 20 4 0.455 DDS 3 4 DDS .MODEL DDS D(BV=600 M=0.478 CJO=855P VJ=0.69) DBODY 3 20 DBODY .MODEL DBODY D(IS=1.5E-11 N=1.03 RS=0.066 TT=1.6U) RA 4 2 1E-3 RS 3 5 1M LS 5 30 8N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 7700P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.54 CJO=7700P VJ=0.014) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------ *$ * *MTP4N85 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP4N85/MC 20 10 30 RG 10 1 7 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.36 KP=3.66 LEVEL=1) CGS 1 3 1200P RD 20 4 2.80 DDS 3 4 DDS .MODEL DDS D(BV=850 M=0.507 CJO=615P VJ=0.428) DBODY 3 20 DBODY .MODEL DBODY D(IS=2.5E-11 N=1.02 RS=0.041 TT=2.2U) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 3420P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.45 CJO=3420P VJ=0.001) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTP3N100 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP3N100/MC 20 10 30 RG 10 1 8 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=2.74 KP=4.7 LEVEL=1) CGS 1 3 900P RD 20 4 3.5 DDS 3 4 DDS .MODEL DDS D(BV=1000 M=0.507 CJO=625P VJ=0.35) DBODY 3 20 DBODY .MODEL DBODY D(IS=5E-11 N=1.02 RS=0.072 TT=1.35U) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 3230P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.45 CJO=3230P VJ=0.0014) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTH5N100 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTH5N100/MC 20 10 30 RG 10 1 5 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.36 KP=3.73 LEVEL=1) CGS 1 3 1642P RD 20 4 1.50 DDS 3 4 DDS .MODEL DDS D(BV=1000 M=0.48 CJO=873P VJ=0.43) DBODY 3 20 DBODY .MODEL DBODY D(IS=3.6E-11 N=1.03 RS=0.057 TT=1U) RA 4 2 1E-3 RS 3 5 1M LS 5 30 8N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 7500P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.5 CJO=7500P VJ=0.00337) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTP12P10 model created using LAAS version * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP12P10/MC 20 10 30 RG 10 1 20 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS PMOS (VTO=-3.58 KP=2 THETA=0.058 VMAX=5E6 LEVEL=3) CGS 1 3 575P RD 20 4 0.17 DDS 4 3 DDS .MODEL DDS D(BV=100 M=0.37 CJO=949P VJ=0.609) DBODY 20 3 DBODY .MODEL DBODY D(IS=1.6E-12 N=1.08 RS=0.068 TT=0.10U) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 1450P RCGD 7 4 1E7 DGD 4 6 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.39 CJO=1450P VJ=0.03) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ * *MTP2P50 model created using LAAS version * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP2P50/MC 20 10 30 RG 10 1 20 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS PMOS (VTO=-3.95 KP=0.421 THETA=0.058 VMAX=5E6 LEVEL=3) CGS 1 3 520P RD 20 4 6.883 DDS 4 3 DDS .MODEL DDS D(BV=500 M=0.45 CJO=400P VJ=0.037) DBODY 20 3 DBODY .MODEL DBODY D(IS=5E-11 N=1.12 RS=0.143 TT=1U) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 1730P RCGD 7 4 1E7 DGD 4 6 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.418 CJO=1730P VJ=2.2E-3) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT *------------------------------------------------------------- *$ *MTM26N40E model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTM26N40E/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.78 KP=24.6 THETA=0.04 VMAX=0.75E5 LEVEL=3) CGS 1 3 4000P RD 20 4 0.126 DDS 3 4 DDS .MODEL DDS D(BV=400 M=0.54 CJO=2740P VJ=0.75) DBODY 3 20 DBODY .MODEL DBODY D(IS=8E-12 N=1.02 RS=0.02 TT=1060N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 12.5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 4000P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.9 CJO=4000P VJ=0.634) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * --------------------------------------------------------- *$ *MTH7N45 model created using LAAS version. * * TMOS MODEL WITH*MTH7N45 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTH7N45/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.45 KP=5.86 THETA=0.04 VMAX=0.8E5 LEVEL=3) CGS 1 3 1150P RD 20 4 0.48 DDS 3 4 DDS .MODEL DDS D(BV=450 M=0.45 CJO=684P VJ=0.48) DBODY 3 20 DBODY .MODEL DBODY D(IS=4E-12 N=1.03 RS=0.04 TT=1000N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 10N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 3800P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.54 CJO=3700P VJ=0.0137) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * --------------------------------------------------------- *$ *MTP50N05EL model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP50N05EL/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=1.72 KP=43 THETA=0.058 VMAX=2E5 LEVEL=3) CGS 1 3 3300P RD 20 4 0.017 DDS 3 4 DDS .MODEL DDS D(BV=50 M=0.4 CJO=3070P VJ=0.667) DBODY 3 20 DBODY .MODEL DBODY D(IS=3E-11 N=1.07 RS=0.08 TT=130N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 6N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 3200P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.6 CJO=3200P VJ=0.188) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * --------------------------------------------------------- *$ *MTP2N50 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP2N50/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.67 KP=1.59 THETA=0.04 VMAX=1.3E5 LEVEL=3) CGS 1 3 500P RD 20 4 1.8 DDS 3 4 DDS .MODEL DDS D(BV=500 M=0.52 CJO=210P VJ=0.74) DBODY 3 20 DBODY .MODEL DBODY D(IS=1.3E-12 N=1.03 RS=0.1 TT=880N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 6N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 800P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.455 CJO=800P VJ=7.7E-3) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * --------------------------------------------------------- *$ *MTP15N05E model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP15N05E/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.55 KP=6.87 THETA=0.04 VMAX=1.6E5 LEVEL=3) CGS 1 3 550P RD 20 4 0.052 DDS 3 4 DDS .MODEL DDS D(BV=60 M=0.4 CJO=724P VJ=0.65) DBODY 3 20 DBODY .MODEL DBODY D(IS=2E-12 N=1.03 RS=0.08 TT=77N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 6N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 1100P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.655 CJO=1100P VJ=0.671) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * --------------------------------------------------------- *$ *MTP25N10E model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP25N10E/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.64 KP=20.5 THETA=0.04 VMAX=1.5E5 LEVEL=3) CGS 1 3 2400P RD 20 4 0.04 DDS 3 4 DDS .MODEL DDS D(BV=100 M=0.42 CJO=2620P VJ=0.667) DBODY 3 20 DBODY .MODEL DBODY D(IS=2.5E-12 N=1.03 RS=0.088 TT=260N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 6N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 1900P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.8 CJO=1900P VJ=0.25) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * --------------------------------------------------------- *$ *MTP3055EL model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP3055EL/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=1.9 KP=7.26 THETA=0.058 VMAX=2.5E5 LEVEL=3) CGS 1 3 500P RD 20 4 0.085 DDS 3 4 DDS .MODEL DDS D(BV=60 M=0.35 CJO=604P VJ=0.39) DBODY 3 20 DBODY .MODEL DBODY D(IS=7.5E-13 N=1.02 RS=0.04 TT=45N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 6N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 740P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.57 CJO=740P VJ=0.099) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * -------------------------------------------------------- *$ *MTP7N20 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP7N20/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.70 KP=2.76 THETA=0.04 VMAX=1.5E5 LEVEL=3) CGS 1 3 350P RD 20 4 0.42 DDS 3 4 DDS .MODEL DDS D(BV=200 M=0.46 CJO=370P VJ=0.676) DBODY 3 20 DBODY .MODEL DBODY D(IS=7E-13 N=1.01 RS=0.22 TT=300N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 6N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 600P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.84 CJO=600P VJ=0.519) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * ------------------------------------------------------- *$ *MTD3055EL model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTD3055EL/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=1.72 KP=8.12 THETA=0.058 VMAX=3E5 LEVEL=3) CGS 1 3 550P RD 20 4 0.12 DDS 3 4 DDS .MODEL DDS D(BV=60 M=0.41 CJO=595P VJ=0.63) DBODY 3 20 DBODY .MODEL DBODY D(IS=1.5E-10 N=1.34 RS=0.057 TT=45N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 700P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.58 CJO=700P VJ=0.107) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * --------------------------------------------------------- *$ *MTD4N20 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTD4N20/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.65 KP=2.26 THETA=0.04 VMAX=1.4E5 LEVEL=3) CGS 1 3 380P RD 20 4 0.589 DDS 3 4 DDS .MODEL DDS D(BV=200 M=0.48 CJO=375P VJ=0.776) DBODY 3 20 DBODY .MODEL DBODY D(IS=8E-13 N=1.03 RS=0.2 TT=340N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 550P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.7 CJO=550P VJ=0.179) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * ------------------------------------------------------- *$ *MTD5N06 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTD5N06/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.64 KP=1.56 THETA=0.04 VMAX=2E5 LEVEL=3) CGS 1 3 200P RD 20 4 0.16 DDS 3 4 DDS .MODEL DDS D(BV=50 M=0.37 CJO=300P VJ=0.53) DBODY 3 20 DBODY .MODEL DBODY D(IS=4E-12 N=1.08 RS=0.175 TT=50N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 300P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.52 CJO=300P VJ=0.339) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * ------------------------------------------------------- *$ *MTD10N05E model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTD10N05E/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.54 KP=8.79 THETA=0.04 VMAX=1.1E5 LEVEL=3) CGS 1 3 500P RD 20 4 0.075 DDS 3 4 DDS .MODEL DDS D(BV=50 M=0.4 CJO=875P VJ=0.674) DBODY 3 20 DBODY .MODEL DBODY D(IS=6.8E-10 N=1.2 RS=0.068 TT=120N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 600P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.6 CJO=600P VJ=0.614) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * ---------------------------------------------------- *$ *MTD2N50 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTD2N50/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.38 KP=1.51 THETA=0.04 VMAX=1.3E5 LEVEL=3) CGS 1 3 450P RD 20 4 1.85 DDS 3 4 DDS .MODEL DDS D(BV=500 M=0.5 CJO=220P VJ=0.59) DBODY 3 20 DBODY .MODEL DBODY D(IS=5E-12 N=1.08 RS=0.13 TT=880N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 850P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.48 CJO=850P VJ=0.0103) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * ------------------------------------------------------- *$ *MTP30N08M model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP30N08M/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.57 KP=20.7 THETA=0.04 VMAX=1E5 LEVEL=3) CGS 1 3 1300P RD 20 4 0.035 DDS 3 4 DDS .MODEL DDS D(BV=80 M=0.43 CJO=1770P VJ=0.657) DBODY 3 20 DBODY .MODEL DBODY D(IS=2E-12 N=1.01 RS=0.033 TT=780N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 6N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 2300P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.63 CJO=2300P VJ=0.368) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * ------------------------------------------------------- *$ *MTP40N06M model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP40N06M/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.15 KP=25 THETA=0.04 VMAX=1E5 LEVEL=3) CGS 1 3 1600P RD 20 4 0.023 DDS 3 4 DDS .MODEL DDS D(BV=60 M=0.42 CJO=1890P VJ=0.717) DBODY 3 20 DBODY .MODEL DBODY D(IS=2.3E-12 N=1.01 RS=0.02 TT=190N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 6N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 2500P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.58 CJO=2500P VJ=0.273) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * -------------------------------------------------------- *$ *MTM10N100E model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTM10N100E/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.5 KP=15 THETA=0.04 VMAX=1.5E5 LEVEL=3) CGS 1 3 3700P RD 20 4 1.12 DDS 3 4 DDS .MODEL DDS D(BV=1000 M=0.56 CJO=2358P VJ=0.4055) DBODY 3 20 DBODY .MODEL DBODY D(IS=1.88E-11 N=1.02 RS=0.017 TT=3040N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 12N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 4500P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.48 CJO=4500P VJ=0.004) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * ------------------------------------------------------- *$ *MTM24N50E model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTM24N50E/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.65 KP=20.9 THETA=0.04 VMAX=0.8E5 LEVEL=3) CGS 1 3 4000P RD 20 4 0.2 DDS 3 4 DDS .MODEL DDS D(BV=500 M=0.56 CJO=3638P VJ=0.395) DBODY 3 20 DBODY .MODEL DBODY D(IS=1E-11 N=1.05 RS=0.01 TT=1250N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 12N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 4500P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.69 CJO=4500P VJ=0.14) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * ------------------------------------------------------ *$ *MTP50N06E model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP50N06E/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS NMOS (VTO=3.79 KP=33.5 THETA=0.04 VMAX=0.8E5 LEVEL=3) CGS 1 3 1750P RD 20 4 0.02 DDS 3 4 DDS .MODEL DDS D(BV=60 M=0.42 CJO=3272P VJ=0.716) DBODY 3 20 DBODY .MODEL DBODY D(IS=2.4E-12 N=1.02 RS=0.009 TT=150N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 2600P RCGD 7 4 1E7 DGD 6 4 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.57 CJO=2600P VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * ----------------------------------------------------- *$ *MTD4P06 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTD4P06/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS PMOS (VTO=-4 KP=1.52 THETA=0.04 VMAX=3.5E5 LEVEL=3) CGS 1 3 650P RD 20 4 0.32 DDS 4 3 DDS .MODEL DDS D(BV=60 M=0.4 CJO=685.5P VJ=0.657) DBODY 20 3 DBODY .MODEL DBODY D(IS=6.4E-13 N=1.03 RS=0.167 TT=190N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 6N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 750P RCGD 7 4 1E7 DGD 4 6 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.44 CJO=750P VJ=0.11) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * ------------------------------------------------------- *$ *MTD2955 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTD2955/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS PMOS (VTO=-2.95 KP=2.45 THETA=0.04 VMAX=4E5 LEVEL=3) CGS 1 3 600P RD 20 4 0.175 DDS 4 3 DDS .MODEL DDS D(BV=60 M=0.43 CJO=740P VJ=0.826) DBODY 20 3 DBODY .MODEL DBODY D(IS=5.6E-13 N=1.04 RS=0.16 TT=400N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 2300P RCGD 7 4 1E7 DGD 4 6 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.43 CJO=2300P VJ=0.028) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * ----------------------------------------------------- *$ *MTP20P06 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP20P06/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS PMOS (VTO=-3.97 KP=3.23 THETA=0.04 VMAX=3E5 LEVEL=3) CGS 1 3 1400P RD 20 4 0.09 DDS 4 3 DDS .MODEL DDS D(BV=60 M=0.43 CJO=1614P VJ=0.792) DBODY 20 3 DBODY .MODEL DBODY D(IS=1.3E-12 N=1.02 RS=0.068 TT=520N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 5N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 2450P RCGD 7 4 1E7 DGD 4 6 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.44 CJO=2450P VJ=0.105) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS * * END OF SUBCIRCUIT * --------------------------------------------------- *$ *MTP8P10 model created using LAAS version. * * TMOS MODEL WITH SWITCHES (SUBCIRCUIT) * .SUBCKT MTP8P10/MC 20 10 30 RG 10 1 1 M1 2 1 3 3 DMOS L=1U W=1U .MODEL DMOS PMOS (VTO=-3.87 KP=2.04 THETA=0.04 VMAX=3.5E5 LEVEL=3) CGS 1 3 750P RD 20 4 0.19 DDS 4 3 DDS .MODEL DDS D(BV=100 M=0.4 CJO=974P VJ=0.583) DBODY 20 3 DBODY .MODEL DBODY D(IS=6E-13 N=1.02 RS=0.31 TT=640N) RA 4 2 1E-3 RS 3 5 1M LS 5 30 6N M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1) CGDMAX 7 4 1700P RCGD 7 4 1E7 DGD 4 6 DGD RDGD 4 6 1E7 .MODEL DGD D(M=0.47 CJO=1700P VJ=0.074) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS *$ * END OF SUBCIRCUIT